{"title":"Si衬底GaN HEMT温度相关小信号表征与建模的综合研究","authors":"Anwar Jarndal","doi":"10.1002/adts.202401555","DOIUrl":null,"url":null,"abstract":"<p>Thermal effects represent a major challenge for all semiconductor devices, particularly high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures have a significant impact on the small and large signal characteristics of the device, degrading its performance. In this paper, a 10 × 200-µm GaN on Si substrate HEMT is characterized using small-signal S-parameter measurement setups at different ambient temperatures. The measurements are used to analyze the impact of temperature on the capacitances, inductances, and resistances of the transistor, as well as the gain and input/output reflection coefficients. Direct characterization of the gain shows a 3 dB reduction when the temperature increased by 100 °C. The results of the characterization are used to build a temperature-dependent model for the investigated device. The model's accuracy is validated through S-parameter simulation at different bias conditions and ambient temperatures. Additionally, the model's scalability has been demonstrated by modeling other GaN-on-Si HEMTs of different sizes. Excellent results and very good agreement between the simulations and measurements are achieved. The results of this investigation highlight the importance of thermal effects and the crucial need for efficient electrothermal modeling in designing reliable application circuits.</p>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"8 6","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comprehensive Investigation on Temperature-Dependent Small-Signal Characterization and Modeling of GaN HEMT on Si Substrate\",\"authors\":\"Anwar Jarndal\",\"doi\":\"10.1002/adts.202401555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Thermal effects represent a major challenge for all semiconductor devices, particularly high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures have a significant impact on the small and large signal characteristics of the device, degrading its performance. In this paper, a 10 × 200-µm GaN on Si substrate HEMT is characterized using small-signal S-parameter measurement setups at different ambient temperatures. The measurements are used to analyze the impact of temperature on the capacitances, inductances, and resistances of the transistor, as well as the gain and input/output reflection coefficients. Direct characterization of the gain shows a 3 dB reduction when the temperature increased by 100 °C. The results of the characterization are used to build a temperature-dependent model for the investigated device. The model's accuracy is validated through S-parameter simulation at different bias conditions and ambient temperatures. Additionally, the model's scalability has been demonstrated by modeling other GaN-on-Si HEMTs of different sizes. Excellent results and very good agreement between the simulations and measurements are achieved. The results of this investigation highlight the importance of thermal effects and the crucial need for efficient electrothermal modeling in designing reliable application circuits.</p>\",\"PeriodicalId\":7219,\"journal\":{\"name\":\"Advanced Theory and Simulations\",\"volume\":\"8 6\",\"pages\":\"\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Theory and Simulations\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adts.202401555\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Theory and Simulations","FirstCategoryId":"5","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adts.202401555","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
摘要
热效应是所有半导体器件的主要挑战,特别是高功率晶体管,如氮化镓高电子迁移率晶体管(hemt)。内外温度的综合影响对器件的小信号和大信号特性有显著影响,降低了器件的性能。在本文中,使用不同环境温度下的小信号s参数测量装置,对Si衬底上10 × 200 μ m GaN的HEMT进行了表征。测量结果用于分析温度对晶体管电容、电感和电阻的影响,以及增益和输入/输出反射系数。直接表征表明,当温度升高100°C时,增益降低3db。表征结果用于为所研究的器件建立温度依赖模型。通过不同偏置条件和环境温度下的s参数仿真,验证了模型的准确性。此外,通过对其他不同尺寸的GaN-on-Si hemt进行建模,证明了该模型的可扩展性。仿真结果与实测结果吻合良好。这项研究的结果强调了热效应的重要性,以及在设计可靠的应用电路时高效的电热建模的必要性。
A Comprehensive Investigation on Temperature-Dependent Small-Signal Characterization and Modeling of GaN HEMT on Si Substrate
Thermal effects represent a major challenge for all semiconductor devices, particularly high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures have a significant impact on the small and large signal characteristics of the device, degrading its performance. In this paper, a 10 × 200-µm GaN on Si substrate HEMT is characterized using small-signal S-parameter measurement setups at different ambient temperatures. The measurements are used to analyze the impact of temperature on the capacitances, inductances, and resistances of the transistor, as well as the gain and input/output reflection coefficients. Direct characterization of the gain shows a 3 dB reduction when the temperature increased by 100 °C. The results of the characterization are used to build a temperature-dependent model for the investigated device. The model's accuracy is validated through S-parameter simulation at different bias conditions and ambient temperatures. Additionally, the model's scalability has been demonstrated by modeling other GaN-on-Si HEMTs of different sizes. Excellent results and very good agreement between the simulations and measurements are achieved. The results of this investigation highlight the importance of thermal effects and the crucial need for efficient electrothermal modeling in designing reliable application circuits.
期刊介绍:
Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including:
materials, chemistry, condensed matter physics
engineering, energy
life science, biology, medicine
atmospheric/environmental science, climate science
planetary science, astronomy, cosmology
method development, numerical methods, statistics