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用同步x射线粉末衍射研究结线型半金属PtSn₄的热稳定性和相演化

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2025-03-03 DOI:10.1016/j.scriptamat.2025.116627

Satheasuweatha M. N , Lara Gigli , Nicola Demitri , C.S. Lue , C.N. Kuo , Sonachalam Arumugam , Boby Joseph

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引用次数: 0

摘要

在300 ~ 873 K范围内，对拓扑节点线半金属PtSn4进行了系统的同步x射线衍射（XRD）。单晶XRD结果表明，PtSn4在100 K时的晶格参数为a = 6.399, b = 11.306, c = 6.363 Å，属于空间群Ccca （n. 68）。这种结构在613k时是稳定的。在673 K时，观察到质量分数为~ 7%的立方PtSn2相对应的布拉格峰。然而，新生PtSn2相和原始PtSn4相似乎共存，直到793 K， PtSn2相分数只有很小的增加。这种对比的温度依赖性可能是由于标题系统的特殊拓扑性质。在833 K时，发现PtSn4不再稳定，分解成PtSn2和SnO2的等量混合物。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

$Thermal stability and phase evolution of topological nodal-line semimetal PtSn₄ using synchrotron X-ray powder diffraction$

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Thermal stability and phase evolution of topological nodal-line semimetal PtSn₄ using synchrotron X-ray powder diffraction

A systematic temperature-dependent synchrotron x-ray diffraction (XRD) of the topological nodal-line semimetallic PtSn₄ in the range of 300 to 873 K is presented. Single-crystal XRD revealed that the PtSn₄ structure belongs to space-group Ccca (n. 68) with lattice parameters a = 6.399, b = 11.306 and c = 6.363 Å at 100 K. This structure is found to be stable up to 613 K. At 673 K, Bragg peaks corresponding to the cubic PtSn₂ phase with weight fraction ∼7% is observed. However, the nascent PtSn₂ and the original PtSn₄ phases seem to co-exist with only a minimal increment in the PtSn₂ phase fraction with temperature till 793 K. Such a contrasting temperature dependence may be due to the peculiar topological properties of the title system. At 833 K, PtSn₄ is found to be no more stable, decomposing to an equal mixture of PtSn₂ and SnO₂.

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来源期刊

Scripta Materialia

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.

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