Gauravkumar Patel, Fabian Ganss, Lorenzo Fallarino, Gabriel Sellge, Mikel Quintana, René Hübner, Dirk Sander, Olav Hellwig, Kilian Lenz, Jürgen Lindner
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A detailed analysis revealed that mainly the compressive strain along the <d:math xmlns:d=\"http://www.w3.org/1998/Math/MathML\"><d:mrow><d:mi>Co</d:mi><d:mo>[</d:mo><d:mn>10</d:mn><d:mover accent=\"true\"><d:mn>1</d:mn><d:mo>¯</d:mo></d:mover><d:mn>0</d:mn><d:mo>]</d:mo></d:mrow></d:math> out-of-plane direction is responsible for the observed magnetoelastic anisotropy, while the tensile strain along the <f:math xmlns:f=\"http://www.w3.org/1998/Math/MathML\"><f:mrow><f:mi>Co</f:mi><f:mo>[</f:mo><f:mover accent=\"true\"><f:mn>1</f:mn><f:mo>¯</f:mo></f:mover><f:mn>2</f:mn><f:mover accent=\"true\"><f:mn>1</f:mn><f:mo>¯</f:mo></f:mover><f:mn>0</f:mn><f:mo>]</f:mo></f:mrow></f:math> IP direction only plays a minor role. <jats:supplementary-material> <jats:copyright-statement>Published by the American Physical Society</jats:copyright-statement> <jats:copyright-year>2025</jats:copyright-year> </jats:permissions> </jats:supplementary-material>","PeriodicalId":20082,"journal":{"name":"Physical Review B","volume":"22 1","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interplay of magnetocrystalline and magnetoelastic anisotropy in epitaxial Co(101¯0) films\",\"authors\":\"Gauravkumar Patel, Fabian Ganss, Lorenzo Fallarino, Gabriel Sellge, Mikel Quintana, René Hübner, Dirk Sander, Olav Hellwig, Kilian Lenz, Jürgen Lindner\",\"doi\":\"10.1103/physrevb.111.054431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the goal of creating an in-plane (IP) uniaxial anisotropy system, we deposited a thickness series of epitaxial Co</a:mi>(</a:mo>10</a:mn>1</a:mn>¯</a:mo></a:mover>0</a:mn>)</a:mo></a:mrow></a:math> films grown on Si(110) substrates with Ag(110) and Cr(211) buffer layers by magnetron sputtering. 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引用次数: 0
摘要
为了创建面内(IP)单轴各向异性系统,我们通过磁控溅射沉积了一系列生长在带有 Ag(110) 和 Cr(211) 缓冲层的 Si(110) 基底上的外延 Co(101¯0) 薄膜。然而,利用铁磁共振测量对 IP 磁各向异性进行量化后发现,其行为比六方紧密堆积(hcp)Co 这样的简单单轴系统所预期的要复杂得多。即使厚度为 100 纳米,也能发现 Co 薄膜中的各向异性应变,主要存在于 Co 基面内,而 c 轴大部分不受影响。计算表明,这种未松弛应变会引起显著的磁弹性各向异性,与磁晶各向异性相抵消,从而降低了整体有效各向异性。详细的分析表明,沿 Co[101¯0] 面外方向的压缩应变是造成所观察到的磁弹性各向异性的主要原因,而沿 Co[1¯21¯0] IP 方向的拉伸应变只起次要作用。 美国物理学会发表于 2025 年
Interplay of magnetocrystalline and magnetoelastic anisotropy in epitaxial Co(101¯0) films
With the goal of creating an in-plane (IP) uniaxial anisotropy system, we deposited a thickness series of epitaxial Co(101¯0) films grown on Si(110) substrates with Ag(110) and Cr(211) buffer layers by magnetron sputtering. However, quantifying the IP magnetic anisotropy using ferromagnetic resonance measurements revealed a much more complex behavior than expected for a simple uniaxial system like hexagonally close-packed (hcp) Co. To understand the experimental results, an in-depth x-ray diffraction analysis of the film structure was performed. Even at a thickness of 100 nm, it revealed an anisotropic strain in the Co films, mainly within the Co basal plane, while the c axis remained mostly unaffected. Calculations show that such unrelaxed strain induces a significant magnetoelastic anisotropy, which counteracts the magnetocrystalline one and, as a result, reduces the overall effective anisotropy. A detailed analysis revealed that mainly the compressive strain along the Co[101¯0] out-of-plane direction is responsible for the observed magnetoelastic anisotropy, while the tensile strain along the Co[1¯21¯0] IP direction only plays a minor role. Published by the American Physical Society2025
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