IF 6.1 1区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR
Siying Zhang, Xue Bai, Tianmi Tang, Weidong Ruan, Jingqi Guan
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引用次数: 0

摘要

合理设计高活性、持久的氧还原反应(ORR)电催化剂,以取代昂贵的铂基催化剂,并显著提高可充电锌空气电池(ZAB)的电催化性能,已成为储能技术领域的一个关键目标。在这里,我们通过快速加热技术调节了掺杂 N 的石墨烯基体上单原子 Zn 位点的配位结构,从而提高了 ORR 性能。在 0.1 M KOH 溶液中,Zn-NG 的半波电位(E1/2)为 0.84 V,具有良好的抗芬顿反应性能。理论计算表明,与 Zn-N2G 和 Zn-N3G 结构相比,Zn-N4G 结构的 ORR 势垒更低。Zn-N2G 和 Zn-N3G 的速率决定步骤是 *O →* OH,两者的反应势垒都明显大于 1.00 eV。相比之下,Zn-N4G 的决定速率步骤为 *OH → * + H2O,能垒仅为 0.68 eV,因此具有更好的催化性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Coordination modulation of single-atom Zn sites to boost oxygen reduction performance
Rational design of highly active and durable oxygen reduction reaction (ORR) electrocatalysts to replace expensive platinum-based catalysts and significantly improve the electrocatalytic performance of rechargeable zinc-air batteries (ZABs) has become a key goal in the field of energy storage technology. Here, we modulate the coordination structure of single-atom Zn sites on N-doped graphene matrix by a rapid heating technology to enhance the ORR performance. In 0.1 M KOH solution, the half-wave potential (E1/2) of Zn-NG is 0.84 V, and it has good anti-Fenton reaction performance. The zinc-air battery assembled with Zn-NG as the cathode material has an open-circuit voltage (OCV) of up to 1.50 V, and exhibits a maximum power density of 158 mW cm-2 and excellent output stability for over 200 h. Theoretical calculations show that the Zn-N4G configuration exhibits lower ORR barrier than Zn-N2G and Zn-N3G structures. The rate-determining step on Zn-N2G and Zn-N3G is *O →* OH, and both show a reaction barrier significantly greater than 1.00 eV. In contrast, the rate-determining step on the Zn-N4G is *OH → * + H2O, and the energy barrier is only 0.68 eV, thus exhibiting better catalytic performance.
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来源期刊
Inorganic Chemistry Frontiers
Inorganic Chemistry Frontiers CHEMISTRY, INORGANIC & NUCLEAR-
CiteScore
10.40
自引率
7.10%
发文量
587
审稿时长
1.2 months
期刊介绍: The international, high quality journal for interdisciplinary research between inorganic chemistry and related subjects
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