- Book学术

发布求助

文献互助智能选刊最新文献

Q3 Materials Science

Macromolecular Symposia Pub Date : 2025-02-17 DOI:10.1002/masy.202400191

Palvinder Singh, Amit Sachdeva, Shruti Singh, M. Z. A. Yahya, Nor Mas Mira Abd Rahman, Rishi Pal

引用次数: 0

摘要

使用 Silvaco Visual T-CAD 模拟器模拟了 90 nm NMOS MOSFET 模型。用于模拟 NMOS MOSFET 的材料有 Al、Si、NpolySi 和 SiO2。为了克服短路问题，在 NMOS 模型中采用了轻掺杂漏极 (LDD) 植入技术。利用 T-CAD 模拟器对模型进行了分析，在保持氧化物厚度 (Tox) 2.373 nm 和栅极长度 0.09 µm 的情况下，获得了 2.568 V 的阈值电压 (Vth)。获得的结果与标准 ITRS 路线图进行了比较，结果几乎相似。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanoscale NMOS Device Model Analysis and its Characteristics

A 90 nm NMOS MOSFET model is simulated using Silvaco Visual T-CAD simulator. The materials used to simulate NMOS MOSFET are Al, Si, NpolySi, and SiO2. To overcome the problem of short circuits, lightly-doped drain (LDD) implantation is applied in NMOS model. The analysis of the model is determined with T-CAD simulator and obtained threshold voltage (V_th) 2.568 V, while keeping oxide thickness (T_ox) 2.373 nm and gate length 0.09 µm. The obtained result is compared with standard ITRS road map and gets almost similar results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Macromolecular Symposia Materials Science-Polymers and Plastics

CiteScore

1.50

自引率

0.00%

发文量

226

期刊介绍： Macromolecular Symposia presents state-of-the-art research articles in the field of macromolecular chemistry and physics. All submitted contributions are peer-reviewed to ensure a high quality of published manuscripts. Accepted articles will be typeset and published as a hardcover edition together with online publication at Wiley InterScience, thereby guaranteeing an immediate international dissemination.