晶界-轴扩展孪晶的原位透射电镜观察

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Hidetoshi Somekawa , Yuka Hara , Taku Moronaga , Alok Singh , Takahito Ohmura
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引用次数: 0

摘要

通过原位TEM压缩试验,研究了Mg中晶界对{101¯2}孪晶形成及其力学响应的影响。压缩方向设置为与<;c>;-轴垂直,这是一个有利于形成{101¯2}孪晶的方向。在单晶的情况下,在压缩尖与试样的接触区域附近会形成{101 2}双胞胎,如先前的研究所报道的那样。相反,当试样具有晶界时,该界面缺陷成为孪晶形核/形成的场所。形成孪晶所需的应力比单晶低。晶界具有防止位错滑移的作用,产生高应力场;结果,它们导致双胞胎胚胎成核。虽然孪核成核是一个概率事件,但形成孪核所需的应力表现出尺寸效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

In-situ TEM observation of <c>-axis extension twin formation at grain boundaries

In-situ TEM observation of -axis extension twin formation at grain boundaries
Effect of grain boundaries on {101¯2} twin formation and its mechanical response in Mg is investigated through in-situ TEM compression test. Compression direction is set to be normal to the <c>-axis, which is a favorable orientation to form {101¯2} twins. In case of a single crystal, {1012} twins form in the vicinity of the contact region of compression-tip with the specimen, as reported in previous studies. On the contrary, when the specimen has a grain boundary, this interfacial defect becomes the nucleation/formation site for twins. Stress required to form the twins is lower than that in a single crystal. Grain boundaries, which have a role in prevention of dislocation slips, create high stress fields; as a result, they lead to nucleation of a twin embryo. While twin nucleation is a probabilistic event, stress required to form the twins shows size effect.
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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