空间限制APCVD制备多层h-BN薄膜及其栅介电应用

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
CrystEngComm Pub Date : 2025-01-09 DOI:10.1039/D4CE01138D
Yajuan Zhao, Liang Shi, Yalong Li, Qian Ma, Jialu Huang, Wenyan Li, Zhen Fu and Haolin Wang
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引用次数: 0

摘要

多层六方氮化硼(h-BN)由于其优异的绝缘性、导热性、化学惰性和超平坦的表面,已成为二维材料或其他常规半导体的良好介电材料。多层氢氮化硼还可作为深紫外光电或新型存储器件的功能材料。然而,制备大面积多层薄膜的挑战严重阻碍了h-BN在电子和光电子应用中的应用。在这项工作中,我们在常压化学气相沉积(APCVD)系统中使用空间受限路线实现了厘米级多层h-BN的受控合成。通过全面的材料表征,确定了多层h-BN的均匀性。我们发现多层h-BN的厚度可以通过APCVD参数进行微调,并系统地研究了其在密闭空间中的生长机理。该多层h-BN薄膜进一步用作端氢金刚石场效应晶体管(FET)的栅极介质,其性能可与普通介质器件相媲美。我们的工作为大规模合成多层h-BN薄膜提供了一种新的策略,为实现其在一系列应用中的全部潜力铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Facile controlled growth of multilayer h-BN thin films using spaced-confined APCVD and its gate dielectric application†

Facile controlled growth of multilayer h-BN thin films using spaced-confined APCVD and its gate dielectric application†

Due to its excellent insulativity, thermal conductivity, chemical inertness and ultraflat surface, multilayer hexagonal boron nitride (h-BN) has become a favorable dielectric for two-dimensional materials or other conventional semiconductors. Multilayer h-BN can also serve as a functional material in deep ultraviolet optoelectronic or novel memory devices. However, the utilization of h-BN in electronic and optoelectronic applications has been severely impeded by the challenge of preparing large-area multilayer thin films. In this work, we achieved the controlled synthesis of centimeter-scale multilayer h-BN using a space confined route within an atmospheric pressure chemical vapor deposition (APCVD) system. Using thorough material characterization, the uniformity of multilayer h-BN is identified. We find that the thickness of multilayer h-BN can be fine-tuned with APCVD parameters and the growth mechanism in the confined space is systematically scrutinized. The multilayer h-BN thin film is further used as the gate dielectric for a hydrogen-terminated diamond field effect transistor (FET), which exhibits comparable performance with the devices with common dielectrics. Our work provides a novel strategy for the large-scale synthesis of multilayer h-BN thin films, paving the way for realizing its full potential in a panoply of applications.

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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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