{"title":"Sb2Se3中的载流子非辐射重组","authors":"Wenxin Dong, Bohao Feng, Anming Mo, Weili Fan, Fulong Dong, Jiahuan Ren, Zhiqiang Li, Xiaohui Zhao* and Wei Dang*, ","doi":"10.1021/acs.jpcc.4c0600710.1021/acs.jpcc.4c06007","DOIUrl":null,"url":null,"abstract":"<p >Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is emerging as an optically active material for optoelectronic devices. Understanding the carrier nonradiative recombination processes in Sb<sub>2</sub>Se<sub>3</sub> is crucial for the improvement of devices’ performance. In this work, the carrier nonradiative recombination was investigated by transient absorption spectrum on the broad time scale from hundred femtoseconds to several microseconds. The evolution of the transient absorption spectrum has been associated with the free carrier and trapped carrier recombination process. Our temperature varying transient absorption spectrum measurement also confirmed that the free carrier recombination in Sb<sub>2</sub>Se<sub>3</sub> is insensitive to temperature. Finally, the rate equation for free carrier recombination in Sb<sub>2</sub>Se<sub>3</sub> was discussed. To simulate the free carrier decay well and interpret its temperature-insensitive character, trap-assisted Auger recombination was introduced into the rate equation.</p>","PeriodicalId":61,"journal":{"name":"The Journal of Physical Chemistry C","volume":"129 3","pages":"1789–1796 1789–1796"},"PeriodicalIF":3.2000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier Nonradiative Recombination in Sb2Se3\",\"authors\":\"Wenxin Dong, Bohao Feng, Anming Mo, Weili Fan, Fulong Dong, Jiahuan Ren, Zhiqiang Li, Xiaohui Zhao* and Wei Dang*, \",\"doi\":\"10.1021/acs.jpcc.4c0600710.1021/acs.jpcc.4c06007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) is emerging as an optically active material for optoelectronic devices. Understanding the carrier nonradiative recombination processes in Sb<sub>2</sub>Se<sub>3</sub> is crucial for the improvement of devices’ performance. In this work, the carrier nonradiative recombination was investigated by transient absorption spectrum on the broad time scale from hundred femtoseconds to several microseconds. The evolution of the transient absorption spectrum has been associated with the free carrier and trapped carrier recombination process. Our temperature varying transient absorption spectrum measurement also confirmed that the free carrier recombination in Sb<sub>2</sub>Se<sub>3</sub> is insensitive to temperature. Finally, the rate equation for free carrier recombination in Sb<sub>2</sub>Se<sub>3</sub> was discussed. To simulate the free carrier decay well and interpret its temperature-insensitive character, trap-assisted Auger recombination was introduced into the rate equation.</p>\",\"PeriodicalId\":61,\"journal\":{\"name\":\"The Journal of Physical Chemistry C\",\"volume\":\"129 3\",\"pages\":\"1789–1796 1789–1796\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Journal of Physical Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.jpcc.4c06007\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.jpcc.4c06007","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Antimony selenide (Sb2Se3) is emerging as an optically active material for optoelectronic devices. Understanding the carrier nonradiative recombination processes in Sb2Se3 is crucial for the improvement of devices’ performance. In this work, the carrier nonradiative recombination was investigated by transient absorption spectrum on the broad time scale from hundred femtoseconds to several microseconds. The evolution of the transient absorption spectrum has been associated with the free carrier and trapped carrier recombination process. Our temperature varying transient absorption spectrum measurement also confirmed that the free carrier recombination in Sb2Se3 is insensitive to temperature. Finally, the rate equation for free carrier recombination in Sb2Se3 was discussed. To simulate the free carrier decay well and interpret its temperature-insensitive character, trap-assisted Auger recombination was introduced into the rate equation.
期刊介绍:
The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.