Sb2Se3中的载流子非辐射重组

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL
Wenxin Dong, Bohao Feng, Anming Mo, Weili Fan, Fulong Dong, Jiahuan Ren, Zhiqiang Li, Xiaohui Zhao* and Wei Dang*, 
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引用次数: 0

摘要

硒化锑(Sb2Se3)是一种用于光电器件的光活性材料。了解Sb2Se3中的载流子非辐射复合过程对于提高器件性能至关重要。本文利用瞬态吸收光谱在几百飞秒到几微秒的宽时间尺度上研究了载流子的非辐射复合。瞬态吸收光谱的演变与自由载流子和捕获载流子的复合过程有关。我们的变温瞬态吸收光谱测量也证实了Sb2Se3中的自由载流子复合对温度不敏感。最后,讨论了Sb2Se3中自由载流子复合的速率方程。为了更好地模拟自由载流子的衰变并解释其对温度不敏感的特性,在速率方程中引入了阱辅助俄钻复合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Carrier Nonradiative Recombination in Sb2Se3

Carrier Nonradiative Recombination in Sb2Se3

Antimony selenide (Sb2Se3) is emerging as an optically active material for optoelectronic devices. Understanding the carrier nonradiative recombination processes in Sb2Se3 is crucial for the improvement of devices’ performance. In this work, the carrier nonradiative recombination was investigated by transient absorption spectrum on the broad time scale from hundred femtoseconds to several microseconds. The evolution of the transient absorption spectrum has been associated with the free carrier and trapped carrier recombination process. Our temperature varying transient absorption spectrum measurement also confirmed that the free carrier recombination in Sb2Se3 is insensitive to temperature. Finally, the rate equation for free carrier recombination in Sb2Se3 was discussed. To simulate the free carrier decay well and interpret its temperature-insensitive character, trap-assisted Auger recombination was introduced into the rate equation.

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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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