大豆对不同外部缺陷响应的荧光特性基础研究。

Takumi Murai, Riku Miyakawa, Yu Obata, Yoshito Saito
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引用次数: 0

摘要

为了研究大豆收获后表面缺陷的荧光特性,采用正面法对2个品种的106个样品进行了激发发射矩阵(EEM)测量,根据缺陷类型评价其荧光特性。EEM在激发/发射(Ex/Em)处有4个主要峰:350 ~ 430 nm/420 ~ 510 nm、410 ~ 450 nm/460 ~ 530 nm、260 ~ 290 nm/300 ~ 350 nm和210 ~ 230 nm/310 ~ 340 nm。在病、虫、变性(黑)大豆中,上述4个主要峰均减弱。此外,在变性(白色)Ex/Em中,观察到260 ~ 290 nm/300 ~ 350 nm的特异峰。此外,利用主成分分析(PCA)进行降维,并在二维图上根据缺陷类型进行可视化。对第一主成分和第二主成分的载荷进行了可视化分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Basic investigation on fluorescence properties of soybeans in response to different external defects.

To investigate the fluorescent properties of defects found on the surface of harvested soybeans, the front-face method was used to measure the Excitation Emission Matrix (EEM) on 106 samples of two varieties of soybeans to evaluate fluorescent properties according to defect type. The EEM showed four main peaks at Excitation/Emission (Ex/Em): 350-430 nm/420-510 nm, 410-450 nm/460-530 nm, 260-290 nm/300-350 nm and 210-230 nm/310-340 nm. In the Diseased, Pest, and Denatured (Black) soybeans, the above four main peaks were weakened. In addition, in the Denatured (White) Ex/Em: 260-290 nm/300-350 nm specific peak was observed. Furthermore, dimensionality reduction was performed using principal component analysis (PCA), and visualization was performed according to defect type on a two-dimensional plot. The loading of the first and second principal components were also visualized.

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