室温下n型和p型导电ZnO/Ag/Fe薄膜的结构、电物理和光学特性

IF 0.5 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
E. R. Arakelova, S. L. Grigoryan, S. G. Aghbalyan, A. B. Mirzoian, L. M. Savchenko, A. M. Khachatryan, A. S. Tsokolakyan
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引用次数: 0

摘要

得到了掺杂(Ag + Fe)锌靶:Zn/Ag/Fe (Zn96, Ag2, Fe 2%;Zn94, Ag2, Fe 4%;Zn90, Ag2, Fe 8%)。在约0.666 Pa的真空条件下,采用直流磁控溅射Zn/Ag/Fe靶材的方法,在玻璃衬底上获得了n型和p型电导率的ZnO/Ag/Fe薄膜。研究了薄膜的结构、电物理、光学和形态特征。研究采用x射线衍射(XRD),原子力显微镜,紫外/可见光谱和霍尔测量。具有n型和p型电导率的ZnO/Ag/Fe薄膜的x射线衍射图显示沿晶体学方向100,002和101在玻璃衬底上的面间距离的特征反射。在400 ~ 930nm波长范围内,这些薄膜的透过率约为85 ~ 95%。具有p型电导率的ZnO/Ag/Fe薄膜的自由载流子浓度约为1018 cm-3。在室温下制备的ZnO/Ag/Fe薄膜可用于开发功能光电器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Structural, Electrophysical, and Optical Characteristics of ZnO/Ag/Fe Thin Films of n- and p-Type Conductivity, Obtained by DC-Magnetron Method at Room Temperature

Structural, Electrophysical, and Optical Characteristics of ZnO/Ag/Fe Thin Films of n- and p-Type Conductivity, Obtained by DC-Magnetron Method at Room Temperature

Doped (Ag + Fe) zinc targets were obtained: Zn/Ag/Fe (Zn96, Ag2, Fe 2%; Zn94, Ag2, Fe 4%; and Zn90, Ag2, Fe 8%). ZnO/Ag/Fe films with n- and p- type conductivity were obtained on glass substrates at room temperature using the method of DC-magnetron sputtering of Zn/Ag/Fe targets in a gas mixture of Ar : O2, in a vacuum of about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were studied. The research was conducted using X-ray diffraction (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The X-ray diffraction patterns of the ZnO/Ag/Fe films with n- and p-type conductivity showed characteristic reflections of interplanar distances on glass substrates along the crystallographic directions 100, 002, and 101. The transmittance of these films is about 85–95% in the wavelength range of 400–930 nm. The ZnO/Ag/Fe films with p-type conductivity have a concentration of free carriers on the order of 1018 cm–3. The ZnO/Ag/Fe films obtained at room temperature of the substrate can be used in the development of functional optoelectronic devices.

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来源期刊
CiteScore
1.00
自引率
66.70%
发文量
43
审稿时长
6-12 weeks
期刊介绍: Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
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