一种低成本、实时电流传感的全桥MOSFET拓扑,可在电阻/电感负载下高效工作

Pritesh Anil Metha;Suresh Mikkili
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摘要

本文介绍了一种经济、实时的电流测量技术,该技术是专门为具有电阻性和感性负载的大多数场效应晶体管全桥拓扑设计的。当前传感方法的多样性强调了精心选择过程的重要性,以满足应用的特定需求,考虑到成本,精度,空间利用率和效率等因素。所提出的导通状态电流测量方案有效地降低了电流传感器的影响,最大限度地减少了整个传感元件的功率损耗,并解决了成本和尺寸问题。此外,通过建立漏极温度与系数k之间的关系来估计结温。在电阻和电感负载条件下的印刷电路板上验证了所提出方法的有效性。测量结果表明,导通电流与参考电流密切相关。值得注意的是,在感应负载的情况下观察到的最小误差,在占空比为10%,频率为25 kHz时的记录值为0.06 a。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Cost, Real-Time Current Sensing Full-Bridge MOSFET Topology for Efficient Operation With Resistive/Inductive Loads
This article introduces an economical and real-time current measurement technique specifically designed for mosfet full bridge topology with both resistive and inductive loads. The diverse range of current sensing approaches underscores the significance of a careful selection process tailored to meet the specific needs of the application, taking into account factors such as cost, accuracy, space utilization, and efficiency. The proposed on-state current measurement scheme effectively reduces the current sensor's impact, minimizes power loss across the sensing element, and addresses cost and size considerations. In addition, the junction temperature is estimated by establishing a relationship between the mosfet drain pad temperature and coefficient “k.” The effectiveness of the proposed methodology is validated on a printed circuit board under both resistive and inductive load conditions. The measurement results demonstrate close adherence of the on-state current to the reference current. Noteworthy is the minimal error observed in the case of an inductive load, with a recorded value of 0.06 A at a duty cycle of 10% and a frequency of 25 kHz.
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