Fei Yan, Ziting Tu, Weiwei Wang, Zhiwei Zhu, Yang Chen, Jiajia Liao, Sirui Zhang, Min Liao and Yichun Zhou
{"title":"通过局部化学设计提高钛酸锶钡薄膜的铁电性能和介电性能","authors":"Fei Yan, Ziting Tu, Weiwei Wang, Zhiwei Zhu, Yang Chen, Jiajia Liao, Sirui Zhang, Min Liao and Yichun Zhou","doi":"10.1039/D4QI02548B","DOIUrl":null,"url":null,"abstract":"<p >Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories, phase shifters, filters, and energy storage capacitors. In the present study, a local chemical design strategy was employed to enhance the ferroelectric and dielectric characteristics of Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>TiO<small><sub>3</sub></small> thin films. The samples were prepared using the chemical solution deposition technique, with Bi<small><sup>3+</sup></small> ions being introduced into the A-sites. As the concentration of Bi<small><sup>3+</sup></small> ions increased, both the maximum polarization and the recoverable energy storage density showed a gradual rise, reaching values of 11.77 μC cm<small><sup>−2</sup></small> and 4.19 J cm<small><sup>−3</sup></small>, respectively, under an applied voltage of 30 V. Notably, the dielectric constant exhibited an enhancement of over 3 times while maintaining a low dielectric loss (<0.06) for the composition of (Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>)<small><sub>0.7□0.1</sub></small>Bi<small><sub>0.2</sub></small>TiO<small><sub>3</sub></small> and (Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>)<small><sub>0.55□0.15</sub></small>Bi<small><sub>0.3</sub></small>TiO<small><sub>3</sub></small>. First-principles calculations demonstrated that substituting Ba<small><sup>2+</sup></small> and Sr<small><sup>2+</sup></small> ions with Bi<small><sup>3+</sup></small> ions in Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>TiO<small><sub>3</sub></small> thin films led to greater off-center displacements of cations, thereby improving the polarization and dielectric constant. The introduction of Bi<small><sup>3+</sup></small> ions also significantly stabilized the dielectric constant, with the temperature coefficient of capacitance varying by less than 6.8% over the range of 25–300 °C. Furthermore, the dielectric constant exhibited minimal hysteresis, along with high dielectric tunability (>20%) and low dielectric loss (<0.02) under a low applied voltage of 12 V. This study provides a promising approach for enhancing the ferroelectric and dielectric properties of lead-free dielectric materials.</p>","PeriodicalId":79,"journal":{"name":"Inorganic Chemistry Frontiers","volume":" 4","pages":" 1493-1502"},"PeriodicalIF":6.4000,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improving the ferroelectric and dielectric properties of barium strontium titanate thin films via local chemical design\",\"authors\":\"Fei Yan, Ziting Tu, Weiwei Wang, Zhiwei Zhu, Yang Chen, Jiajia Liao, Sirui Zhang, Min Liao and Yichun Zhou\",\"doi\":\"10.1039/D4QI02548B\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories, phase shifters, filters, and energy storage capacitors. In the present study, a local chemical design strategy was employed to enhance the ferroelectric and dielectric characteristics of Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>TiO<small><sub>3</sub></small> thin films. The samples were prepared using the chemical solution deposition technique, with Bi<small><sup>3+</sup></small> ions being introduced into the A-sites. As the concentration of Bi<small><sup>3+</sup></small> ions increased, both the maximum polarization and the recoverable energy storage density showed a gradual rise, reaching values of 11.77 μC cm<small><sup>−2</sup></small> and 4.19 J cm<small><sup>−3</sup></small>, respectively, under an applied voltage of 30 V. Notably, the dielectric constant exhibited an enhancement of over 3 times while maintaining a low dielectric loss (<0.06) for the composition of (Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>)<small><sub>0.7□0.1</sub></small>Bi<small><sub>0.2</sub></small>TiO<small><sub>3</sub></small> and (Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>)<small><sub>0.55□0.15</sub></small>Bi<small><sub>0.3</sub></small>TiO<small><sub>3</sub></small>. First-principles calculations demonstrated that substituting Ba<small><sup>2+</sup></small> and Sr<small><sup>2+</sup></small> ions with Bi<small><sup>3+</sup></small> ions in Sr<small><sub>0.6</sub></small>Ba<small><sub>0.4</sub></small>TiO<small><sub>3</sub></small> thin films led to greater off-center displacements of cations, thereby improving the polarization and dielectric constant. The introduction of Bi<small><sup>3+</sup></small> ions also significantly stabilized the dielectric constant, with the temperature coefficient of capacitance varying by less than 6.8% over the range of 25–300 °C. Furthermore, the dielectric constant exhibited minimal hysteresis, along with high dielectric tunability (>20%) and low dielectric loss (<0.02) under a low applied voltage of 12 V. This study provides a promising approach for enhancing the ferroelectric and dielectric properties of lead-free dielectric materials.</p>\",\"PeriodicalId\":79,\"journal\":{\"name\":\"Inorganic Chemistry Frontiers\",\"volume\":\" 4\",\"pages\":\" 1493-1502\"},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2024-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Chemistry Frontiers\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/qi/d4qi02548b\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry Frontiers","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/qi/d4qi02548b","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
Improving the ferroelectric and dielectric properties of barium strontium titanate thin films via local chemical design
Ferroelectric thin films have gained significant attention in recent years due to their potential applications in electronic devices such as ferroelectric memories, phase shifters, filters, and energy storage capacitors. In the present study, a local chemical design strategy was employed to enhance the ferroelectric and dielectric characteristics of Sr0.6Ba0.4TiO3 thin films. The samples were prepared using the chemical solution deposition technique, with Bi3+ ions being introduced into the A-sites. As the concentration of Bi3+ ions increased, both the maximum polarization and the recoverable energy storage density showed a gradual rise, reaching values of 11.77 μC cm−2 and 4.19 J cm−3, respectively, under an applied voltage of 30 V. Notably, the dielectric constant exhibited an enhancement of over 3 times while maintaining a low dielectric loss (<0.06) for the composition of (Sr0.6Ba0.4)0.7□0.1Bi0.2TiO3 and (Sr0.6Ba0.4)0.55□0.15Bi0.3TiO3. First-principles calculations demonstrated that substituting Ba2+ and Sr2+ ions with Bi3+ ions in Sr0.6Ba0.4TiO3 thin films led to greater off-center displacements of cations, thereby improving the polarization and dielectric constant. The introduction of Bi3+ ions also significantly stabilized the dielectric constant, with the temperature coefficient of capacitance varying by less than 6.8% over the range of 25–300 °C. Furthermore, the dielectric constant exhibited minimal hysteresis, along with high dielectric tunability (>20%) and low dielectric loss (<0.02) under a low applied voltage of 12 V. This study provides a promising approach for enhancing the ferroelectric and dielectric properties of lead-free dielectric materials.