Bi气相流中生长InGaAs/GaAs量子点的透射电镜研究

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2024-12-26 DOI:10.3103/S1068335624601067

I. N. Trunkin, I. P. Kazakov

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引用次数: 0

摘要

利用透射电子显微镜研究了在不同温度下GaAs衬底生长表面Bi气相流影响下分子束外延形成InGaAs/GaAs量子点的过程。发现了混合维纳米结构（0D/2D）。能量色散x射线光谱表明，铋作为表面活性剂，不被生长层捕获。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow

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Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow

Transmission electron microscopy is used to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the influence of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. Mixed-dimensional nanostructures (0D/2D) are found. Energy-dispersive X-ray spectroscopy demonstrates that Bi acts as a surfactant and is not trapped by the growing layers.

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.