具有特定范诺共振特性的硅结构的制造

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2024-12-26 DOI:10.3103/S1068335624600797

N. N. Melnik, V. V. Tregulov, G. N. Skoptsova, D. S. Kostsov

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引用次数: 0

摘要

利用硼的热扩散，研究了工艺参数对硅单晶衬底上形成的半导体结构中Fano共振特性的影响。利用拉曼光谱研究了法诺共振。结果表明，与没有多孔膜的样品相比，在单晶衬底表面形成多孔硅膜扩大了制造具有特定Fano共振参数的结构的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Fabrication of Silicon Structures with Specified Fano Resonance Characteristics

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Fabrication of Silicon Structures with Specified Fano Resonance Characteristics

We study the effect of technological parameters on the characteristics of the Fano resonance in semiconductor structures formed on silicon single-crystal substrates using thermal diffusion of boron. The Fano resonance is investigated using Raman spectroscopy. It is shown that the formation of porous silicon films on the surface of a single-crystal substrate expands the possibilities of fabricating structures with specified Fano resonance parameters, compared to samples without a porous film.

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.