A statistical and modeling study on the effects of radiation on Au/Ta/ZrO2(Y)/Pt/Ti memristive devices

In this study we have investigated the impact of the changes induced by ion irradiation on the performance and reliability of Au/Ta/ZrO2(Y)/Pt/Ti memristive devices. A comprehensive experimental approach was employed, involving irradiation with various ion species, including H+, Ne+, O+, and Kr+ to simulate different radiation environments. Thus, advanced statistical and modeling techniques to analyze the effects of irradiation on the resistive switching (RS) characteristics of the devices have been employed. Results revealed alterations in the post-irradiation RS parameters, including set and reset voltages and currents. These changes were found to depend on the ion species and dosage, with heavier ions such as Kr+ causing more pronounced effects. The findings are supported by detailed Monte Carlo simulations, which provided insights into the distribution of vacancies within the memristive devices under neutron irradiation. The experimental data, combined with the modeling results, indicate that RS is generally tolerant to radiation, although ion irradiation can lead to the formation of defect structures that affect the switching parameters of memristive devices.