破解高压集成栅极整流晶闸管的导通电压峰值

IF 6.5 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Power Electronics Pub Date : 2024-12-09 DOI:10.1109/TPEL.2024.3514459

Jinpeng Wu;Jianhong Pan;Chunpin Ren;Jiapeng Liu;Biao Zhao;Zhanqing Yu;Rong Zeng

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引用次数: 0

摘要

高压集成栅极整流晶闸管（IGCT，反阻断型）是一种适用于混合线整流变换器的抗整流失效器件。在导通过程中，在较高的电流上升速率di/dt （kA/μs）下观察到电压平台。为了破解这一现象的机理和潜在风险，本文重点研究了电压平台的微过程和影响因素，发现注入孔的不足抑制了空间电荷区的放电过程，导致了这一现象的产生。进一步阐明了热稳定性和终身可靠性。本文将有利于高压IGCT器件的科学和技术研究与开发。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Decipher Turn-On Voltage Plateau of High-Voltage Integrated Gate Commutated Thyristors

The high-voltage integrated gate commutated thyristor (IGCT, reverse-blocking type) is a suitable device for hybrid line-commutated converters to resist commutation failures. During the turn-on process, a voltage plateau is observed under a high the current rise rate di/dt up to kA/μs. In order to decipher the mechanism and the potential risk of this phenomenon, this article focuses on the microprocess and influencing factors of the voltage plateau and finds out that the shortage of injected holes depresses the process of discharging space charge region and leads to this phenomenon. Further, the thermal stability and life-long reliability are clarified. This article will be in favor of the research and development of high-voltage IGCT devices both scientifically and technically.

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来源期刊

IEEE Transactions on Power Electronics 工程技术-工程：电子与电气

CiteScore

15.20

自引率

20.90%

发文量

1099

审稿时长

3 months

期刊介绍： The IEEE Transactions on Power Electronics journal covers all issues of widespread or generic interest to engineers who work in the field of power electronics. The Journal editors will enforce standards and a review policy equivalent to the IEEE Transactions, and only papers of high technical quality will be accepted. Papers which treat new and novel device, circuit or system issues which are of generic interest to power electronics engineers are published. Papers which are not within the scope of this Journal will be forwarded to the appropriate IEEE Journal or Transactions editors. Examples of papers which would be more appropriately published in other Journals or Transactions include: 1) Papers describing semiconductor or electron device physics. These papers would be more appropriate for the IEEE Transactions on Electron Devices. 2) Papers describing applications in specific areas: e.g., industry, instrumentation, utility power systems, aerospace, industrial electronics, etc. These papers would be more appropriate for the Transactions of the Society which is concerned with these applications. 3) Papers describing magnetic materials and magnetic device physics. These papers would be more appropriate for the IEEE Transactions on Magnetics. 4) Papers on machine theory. These papers would be more appropriate for the IEEE Transactions on Power Systems. While original papers of significant technical content will comprise the major portion of the Journal, tutorial papers and papers of historical value are also reviewed for publication.