结构无序和外加偏压变化对 Sm0.55-xPrxSr0.45MnO3 (0≤x≤0.4) 陶瓷的跳变传导机制、散射过程和电阻温度系数特性的影响

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Chemistry and Physics Pub Date : 2024-11-22 DOI:10.1016/j.matchemphys.2024.130185

Y. Moualhi, H. Rahmouni

{"title":"结构无序和外加偏压变化对 Sm0.55-xPrxSr0.45MnO3 (0≤x≤0.4) 陶瓷的跳变传导机制、散射过程和电阻温度系数特性的影响","authors":"Y. Moualhi, H. Rahmouni","doi":"10.1016/j.matchemphys.2024.130185","DOIUrl":null,"url":null,"abstract":"<div><div>The influence of the Praseodymium content and the applied bias voltage on the structural properties, scattering processes, electrical conduction, and the temperature coefficient of resistance characteristics of Sm0.55-xPrxSr0.45MnO3 (0.0≤x ≤ 0.4) ceramics has been discussed. At room temperature, the refined X-ray diffraction data confirmed that the prepared compounds crystallize in the distorted orthorhombic system with a Pbnm space group. In addition, the structural study proves the single-phase nature of all the substituted Sm0.55-xPrxSr0.45MnO3 (0.1≤x ≤ 0.4) compounds without any detectable impurities. By increasing the Praseodymium content, it is observed that the A-site cationic size disorder has decreased from σ2 (x = 0.0) = 8.019 × 10−3 Å2 to σ2 (x = 0.4) = 5.3602 × 10−3 Å2. The electrical resistivity study confirmed the strong impact of cationic disorder variation on the dynamics of charge carriers and Mn–Mn cation interactions. It is worth mentioning that all of the prepared compounds demonstrate maximum resistivity at a well-defined transition temperature TM-S. The transition temperature has shifted towards 240 K for x = 0.4, indicating a clear trend in the data. Below TM-S, the metallic behavior of the materials is related to the electron bandwidth competition and size disorder effects. The aforementioned effects are being examined concerning the scattering processes between electron, phonon, and magnon interactions. Beyond TM-S, the electrical resistivity decrease has been attributed to the electron bandwidth increase. The enhanced conduction and the appearance of a semiconductor behavior have been attributed to the activation of the small polaron hopping and variable range hopping mechanisms. The results show that the studied ceramics exhibit both positive and negative temperature coefficient of resistance (TCR) characteristics that depend mainly on the cationic disorder and the bias voltage effects. The maximum TCR value has been observed for Sm0.45Pr0.1Sr0.45MnO3 after applying a bias voltage value of 1V.</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"332 ","pages":"Article 130185"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of the structural disorder and applied bias voltage variations on the hopping conduction mechanisms, scattering processes, and temperature coefficient of resistance characteristics of Sm0.55-xPrxSr0.45MnO3 (0≤x≤0.4) ceramics\",\"authors\":\"Y. Moualhi, H. Rahmouni\",\"doi\":\"10.1016/j.matchemphys.2024.130185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The influence of the Praseodymium content and the applied bias voltage on the structural properties, scattering processes, electrical conduction, and the temperature coefficient of resistance characteristics of Sm0.55-xPrxSr0.45MnO3 (0.0≤x ≤ 0.4) ceramics has been discussed. At room temperature, the refined X-ray diffraction data confirmed that the prepared compounds crystallize in the distorted orthorhombic system with a Pbnm space group. In addition, the structural study proves the single-phase nature of all the substituted Sm0.55-xPrxSr0.45MnO3 (0.1≤x ≤ 0.4) compounds without any detectable impurities. By increasing the Praseodymium content, it is observed that the A-site cationic size disorder has decreased from σ2 (x = 0.0) = 8.019 × 10−3 Å2 to σ2 (x = 0.4) = 5.3602 × 10−3 Å2. The electrical resistivity study confirmed the strong impact of cationic disorder variation on the dynamics of charge carriers and Mn–Mn cation interactions. It is worth mentioning that all of the prepared compounds demonstrate maximum resistivity at a well-defined transition temperature TM-S. The transition temperature has shifted towards 240 K for x = 0.4, indicating a clear trend in the data. Below TM-S, the metallic behavior of the materials is related to the electron bandwidth competition and size disorder effects. The aforementioned effects are being examined concerning the scattering processes between electron, phonon, and magnon interactions. Beyond TM-S, the electrical resistivity decrease has been attributed to the electron bandwidth increase. The enhanced conduction and the appearance of a semiconductor behavior have been attributed to the activation of the small polaron hopping and variable range hopping mechanisms. The results show that the studied ceramics exhibit both positive and negative temperature coefficient of resistance (TCR) characteristics that depend mainly on the cationic disorder and the bias voltage effects. The maximum TCR value has been observed for Sm0.45Pr0.1Sr0.45MnO3 after applying a bias voltage value of 1V.</div></div>\",\"PeriodicalId\":18227,\"journal\":{\"name\":\"Materials Chemistry and Physics\",\"volume\":\"332 \",\"pages\":\"Article 130185\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Chemistry and Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0254058424013130\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058424013130","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

讨论了镨含量和外加偏置电压对 Sm0.55-xPrxSr0.45MnO3 (0.0≤x ≤ 0.4) 陶瓷的结构特性、散射过程、电传导和电阻温度系数特性的影响。在室温下，精制的 X 射线衍射数据证实，所制备的化合物在具有 Pbnm 空间群的变形正方晶系中结晶。此外，结构研究还证明了所有取代 Sm0.55-xPrxSr0.45MnO3 （0.1≤x ≤0.4）化合物的单相性质，且未检测到任何杂质。随着镨含量的增加，可以观察到 A 位阳离子尺寸无序度从 σ2 (x = 0.0) = 8.019 × 10-3 Å2 下降到 σ2 (x = 0.4) = 5.3602 × 10-3 Å2。电阻率研究证实了阳离子无序变化对电荷载流子动力学和锰锰阳离子相互作用的强烈影响。值得一提的是，所有制备的化合物都在明确的转变温度 TM-S 下表现出最大电阻率。当 x = 0.4 时，过渡温度向 240 K 移动，这表明数据具有明显的趋势。在 TM-S 以下，材料的金属特性与电子带宽竞争和尺寸无序效应有关。目前正在研究上述效应与电子、声子和磁子相互作用之间的散射过程。在 TM-S 之外，电阻率的降低归因于电子带宽的增加。传导的增强和半导体行为的出现归因于小极子跳变和可变范围跳变机制的激活。研究结果表明，所研究的陶瓷呈现出正负两种电阻温度系数（TCR）特性，这主要取决于阳离子无序和偏置电压效应。在施加 1V 的偏置电压后，Sm0.45Pr0.1Sr0.45MnO3 的 TCR 值达到最大。

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Influence of the structural disorder and applied bias voltage variations on the hopping conduction mechanisms, scattering processes, and temperature coefficient of resistance characteristics of Sm0.55-xPrxSr0.45MnO3 (0≤x≤0.4) ceramics

The influence of the Praseodymium content and the applied bias voltage on the structural properties, scattering processes, electrical conduction, and the temperature coefficient of resistance characteristics of Sm_0.55-xPr_xSr_0.45MnO₃ (0.0≤x ≤ 0.4) ceramics has been discussed. At room temperature, the refined X-ray diffraction data confirmed that the prepared compounds crystallize in the distorted orthorhombic system with a Pbnm space group. In addition, the structural study proves the single-phase nature of all the substituted Sm_0.55-xPr_xSr_0.45MnO₃ (0.1≤x ≤ 0.4) compounds without any detectable impurities. By increasing the Praseodymium content, it is observed that the A-site cationic size disorder has decreased from σ² (x = 0.0) = 8.019 × 10⁻³ Å² to σ² (x = 0.4) = 5.3602 × 10⁻³ Å². The electrical resistivity study confirmed the strong impact of cationic disorder variation on the dynamics of charge carriers and Mn–Mn cation interactions. It is worth mentioning that all of the prepared compounds demonstrate maximum resistivity at a well-defined transition temperature T_M-S. The transition temperature has shifted towards 240 K for x = 0.4, indicating a clear trend in the data. Below T_M-S, the metallic behavior of the materials is related to the electron bandwidth competition and size disorder effects. The aforementioned effects are being examined concerning the scattering processes between electron, phonon, and magnon interactions. Beyond T_M-S, the electrical resistivity decrease has been attributed to the electron bandwidth increase. The enhanced conduction and the appearance of a semiconductor behavior have been attributed to the activation of the small polaron hopping and variable range hopping mechanisms. The results show that the studied ceramics exhibit both positive and negative temperature coefficient of resistance (TCR) characteristics that depend mainly on the cationic disorder and the bias voltage effects. The maximum TCR value has been observed for Sm_0.45Pr_0.1Sr_0.45MnO₃ after applying a bias voltage value of 1V.

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来源期刊

Materials Chemistry and Physics 工程技术-材料科学：综合

CiteScore

8.70

自引率

4.30%

发文量

1515

审稿时长

69 days

期刊介绍： Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.