通过掺杂 Nd3+ 离子改变 SrBi2Nb2O9 Aurivillius 相化合物的结构和铁电性

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zulhadjri, Alfir Rizki, Tio Putra Wendari, Yulia Eka Putri
{"title":"通过掺杂 Nd3+ 离子改变 SrBi2Nb2O9 Aurivillius 相化合物的结构和铁电性","authors":"Zulhadjri,&nbsp;Alfir Rizki,&nbsp;Tio Putra Wendari,&nbsp;Yulia Eka Putri","doi":"10.1016/j.matchemphys.2024.130177","DOIUrl":null,"url":null,"abstract":"<div><div>Layered bismuth ferroelectrics such as SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> (SBN) are recognized for their potential in advanced ferroelectric technologies. This study involves enhancing the dielectric characteristics of SBN through Nd<sup>3+</sup> doping, leading to the development of SrBi<sub>2-x</sub>Nd<sub><em>x</em></sub>Nb<sub>2</sub>O<sub>9</sub>. These compound were synthesized across a series of compositions (<em>x</em> = 0.025, 0.05, 0.075, 0.1, 0.125, 0.25, and 0.275) via the molten salt method. X-ray diffraction (XRD) confirmed that all the samples retained an orthorhombic lattice structure in the <em>A</em>2<sub>1</sub><em>am</em> space group. This demonstrated decreased in cell volume and orthorhombicity as Nd<sup>3+</sup> concentration increased. Scanning electron microscopy (SEM) with particle size distribution histogram revealed a progressive reduction in grain size, forming smaller, plate-like structures with higher levels of Nd<sup>3+</sup>. The alteration in Nd<sup>3+</sup> concentration significantly lowered the ferroelectric transition temperature (<em>T</em><sub><em>c</em></sub>) and dielectric constant, primarily due to the reduced effect of Bi<sup>3+</sup> ions 6s<sup>2</sup> lone pairs on structural distortion. The compound with <em>x</em> = 0.275 demonstrated a diffuse ferroelectric transition, marked by an expanded <em>T</em><sub><em>c</em></sub> peak, illustrating the profound impact of Nd<sup>3+</sup> doping on SBN dielectric and ferroelectric properties. This study investigates the effects of Nd<sup>3+</sup> doping on the structural and dielectric properties of SBN, with implications for its potential use in ferroelectric applications such as FeRAM (Ferroelectric Random Access Memory).</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"331 ","pages":"Article 130177"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and ferroelectric modifications in SrBi2Nb2O9 Aurivillius phase compounds by Nd3+ ion doping\",\"authors\":\"Zulhadjri,&nbsp;Alfir Rizki,&nbsp;Tio Putra Wendari,&nbsp;Yulia Eka Putri\",\"doi\":\"10.1016/j.matchemphys.2024.130177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Layered bismuth ferroelectrics such as SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> (SBN) are recognized for their potential in advanced ferroelectric technologies. This study involves enhancing the dielectric characteristics of SBN through Nd<sup>3+</sup> doping, leading to the development of SrBi<sub>2-x</sub>Nd<sub><em>x</em></sub>Nb<sub>2</sub>O<sub>9</sub>. These compound were synthesized across a series of compositions (<em>x</em> = 0.025, 0.05, 0.075, 0.1, 0.125, 0.25, and 0.275) via the molten salt method. X-ray diffraction (XRD) confirmed that all the samples retained an orthorhombic lattice structure in the <em>A</em>2<sub>1</sub><em>am</em> space group. This demonstrated decreased in cell volume and orthorhombicity as Nd<sup>3+</sup> concentration increased. Scanning electron microscopy (SEM) with particle size distribution histogram revealed a progressive reduction in grain size, forming smaller, plate-like structures with higher levels of Nd<sup>3+</sup>. The alteration in Nd<sup>3+</sup> concentration significantly lowered the ferroelectric transition temperature (<em>T</em><sub><em>c</em></sub>) and dielectric constant, primarily due to the reduced effect of Bi<sup>3+</sup> ions 6s<sup>2</sup> lone pairs on structural distortion. The compound with <em>x</em> = 0.275 demonstrated a diffuse ferroelectric transition, marked by an expanded <em>T</em><sub><em>c</em></sub> peak, illustrating the profound impact of Nd<sup>3+</sup> doping on SBN dielectric and ferroelectric properties. This study investigates the effects of Nd<sup>3+</sup> doping on the structural and dielectric properties of SBN, with implications for its potential use in ferroelectric applications such as FeRAM (Ferroelectric Random Access Memory).</div></div>\",\"PeriodicalId\":18227,\"journal\":{\"name\":\"Materials Chemistry and Physics\",\"volume\":\"331 \",\"pages\":\"Article 130177\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Chemistry and Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0254058424013051\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058424013051","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

层状铋铁电体(如 SrBi2Nb2O9 (SBN))在先进铁电技术中的潜力已得到公认。本研究通过掺杂 Nd3+ 来增强 SBN 的介电特性,从而开发出 SrBi2-xNdxNb2O9。这些化合物是通过熔盐法合成的,包含一系列成分(x = 0.025、0.05、0.075、0.1、0.125、0.25 和 0.275)。X 射线衍射 (XRD) 证实,所有样品都保留了 A21am 空间群的正方晶格结构。这表明随着 Nd3+ 浓度的增加,晶胞体积和正交性都有所下降。扫描电子显微镜(SEM)和粒度分布直方图显示,随着 Nd3+ 浓度的增加,晶粒尺寸逐渐减小,形成更小的板状结构。Nd3+ 浓度的改变大大降低了铁电转换温度(Tc)和介电常数,这主要是由于 Bi3+ 离子 6s2 孤对对结构畸变的影响减弱。x = 0.275 的化合物表现出弥散铁电转变,其特征是 Tc 峰扩大,这说明了掺杂 Nd3+ 对 SBN 介电和铁电性质的深刻影响。本研究探讨了掺杂 Nd3+ 对 SBN 的结构和介电性质的影响,并对其在铁电应用(如铁电随机存取存储器)中的潜在用途产生了影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and ferroelectric modifications in SrBi2Nb2O9 Aurivillius phase compounds by Nd3+ ion doping
Layered bismuth ferroelectrics such as SrBi2Nb2O9 (SBN) are recognized for their potential in advanced ferroelectric technologies. This study involves enhancing the dielectric characteristics of SBN through Nd3+ doping, leading to the development of SrBi2-xNdxNb2O9. These compound were synthesized across a series of compositions (x = 0.025, 0.05, 0.075, 0.1, 0.125, 0.25, and 0.275) via the molten salt method. X-ray diffraction (XRD) confirmed that all the samples retained an orthorhombic lattice structure in the A21am space group. This demonstrated decreased in cell volume and orthorhombicity as Nd3+ concentration increased. Scanning electron microscopy (SEM) with particle size distribution histogram revealed a progressive reduction in grain size, forming smaller, plate-like structures with higher levels of Nd3+. The alteration in Nd3+ concentration significantly lowered the ferroelectric transition temperature (Tc) and dielectric constant, primarily due to the reduced effect of Bi3+ ions 6s2 lone pairs on structural distortion. The compound with x = 0.275 demonstrated a diffuse ferroelectric transition, marked by an expanded Tc peak, illustrating the profound impact of Nd3+ doping on SBN dielectric and ferroelectric properties. This study investigates the effects of Nd3+ doping on the structural and dielectric properties of SBN, with implications for its potential use in ferroelectric applications such as FeRAM (Ferroelectric Random Access Memory).
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信