基于 AlGaAs/GaAs/InGaAs 异质结构的半导体激光器-晶闸管输出光功率的温度依赖性

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
P. S. Gavrina, A. A. Podoskin, I. V. Shushkanov, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
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引用次数: 0

摘要

在 20 至 70°C 的工作温度范围内,在放电电容标称值为 22 nF 和控制电流振幅为 10.4 mA 的条件下,对带宽为 200 μm、长度为 980 μm 的半导体激光晶闸管的输出光功率、激光振荡光谱、光脉冲持续时间和接通延迟进行了测量。结果表明,激光晶闸管具有很高的温度稳定性。当器件从 20°C 加热到 70°C 时,峰值输出功率的降低程度在电源电压为 4-20 V 时不超过 15%,在电压为 3 V 时不超过 25%;振荡光谱中心波长的移动平均为 0.21 nm/°C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Temperature Dependence of the Output Optical Power of Semiconductor Lasers–Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures

Temperature Dependence of the Output Optical Power of Semiconductor Lasers–Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures

Measurements of the output optical power, laser-oscillation spectra, optical-pulse duration, and switching-on delays of semiconductor lasers–thyristors with a strip width of 200 μm and a length of 980 μm were performed in the operating temperature range from 20 to 70°C at a nominal value of the discharge capacitor of 22 nF and a control-current amplitude of 10.4 mA. It is shown that lasers–thyristors have high temperature stability. When the devices were heated from 20 to 70°C, the level of reduction of the peak output power did not exceed 15% for supply voltages of 4–20 V and 25% for a voltage of 3 V; the shift of the central wavelength of the oscillation spectrum was on average 0.21 nm/°C.

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来源期刊
Bulletin of the Lebedev Physics Institute
Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-
CiteScore
0.70
自引率
25.00%
发文量
41
审稿时长
6-12 weeks
期刊介绍: Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.
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