Remote-Contact Catalysis for Target-Diameter Semiconducting Carbon Nanotube Arrays

Electrostatic catalysis uses an external electric field (EEF) to rearrange the charge distribution to boost reaction rates and selectively produce certain reaction products in small-molecule reactions (e.g., Diels–Alder addition), requiring a 10 MV/cm field aligned with the reaction axis. Such a large and oriented EEF is challenging for large-scale implementation or material growth with multiple reaction axes or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work-function electrode (e.g., hafnium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for 99.92% purity s-SWCNT growth with a narrow diameter distribution (0.95 ± 0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing.