Anastassiya V. Mezentseva, Nursultan E. Sagatov, Pavel N. Gavryushkin, Dinara N. Sagatova
{"title":"在高压下稳定的 Rb2O 和 Cs2O 新结构","authors":"Anastassiya V. Mezentseva, Nursultan E. Sagatov, Pavel N. Gavryushkin, Dinara N. Sagatova","doi":"10.1016/j.commatsci.2024.113517","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, a search for stable structures of Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O was carried out using evolutionary algorithms within the density functional theory. In the studied pressure range of 0–100 GPa, for Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O, the transitions <span><math><mrow><mi>F</mi><mi>m</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover><mi>m</mi></mrow></math></span> <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-I <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II were detected, which are realized at pressures of 2.6 and 40 GPa, respectively. For Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O, the transitions <span><math><mrow><mi>R</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover><mi>m</mi></mrow></math></span> <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-I <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> were revealed, which are realized at pressures of 6.3 and 63 GPa. As a result, previously unknown structures were found for these oxides Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span>. According to the calculated phonon dispersion curves, the predicted structures are dynamically stable. Also, the <em>P–T</em> diagram for Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O was calculated for the first time. The electronic properties of the newly predicted high-pressure structures Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> were investigated, and the band structures and electron density of states (DOS) were calculated.</div></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":"247 ","pages":"Article 113517"},"PeriodicalIF":3.1000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New structures of Rb2O and Cs2O stable at high pressures\",\"authors\":\"Anastassiya V. Mezentseva, Nursultan E. Sagatov, Pavel N. Gavryushkin, Dinara N. Sagatova\",\"doi\":\"10.1016/j.commatsci.2024.113517\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, a search for stable structures of Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O was carried out using evolutionary algorithms within the density functional theory. In the studied pressure range of 0–100 GPa, for Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O, the transitions <span><math><mrow><mi>F</mi><mi>m</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover><mi>m</mi></mrow></math></span> <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-I <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II were detected, which are realized at pressures of 2.6 and 40 GPa, respectively. For Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O, the transitions <span><math><mrow><mi>R</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>̄</mo></mrow></mover><mi>m</mi></mrow></math></span> <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-I <span><math><mo>↔</mo></math></span> <span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> were revealed, which are realized at pressures of 6.3 and 63 GPa. As a result, previously unknown structures were found for these oxides Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span>. According to the calculated phonon dispersion curves, the predicted structures are dynamically stable. Also, the <em>P–T</em> diagram for Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O was calculated for the first time. The electronic properties of the newly predicted high-pressure structures Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> were investigated, and the band structures and electron density of states (DOS) were calculated.</div></div>\",\"PeriodicalId\":10650,\"journal\":{\"name\":\"Computational Materials Science\",\"volume\":\"247 \",\"pages\":\"Article 113517\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computational Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927025624007389\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Materials Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927025624007389","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
New structures of Rb2O and Cs2O stable at high pressures
In this work, a search for stable structures of RbO and CsO was carried out using evolutionary algorithms within the density functional theory. In the studied pressure range of 0–100 GPa, for RbO, the transitions -I -II were detected, which are realized at pressures of 2.6 and 40 GPa, respectively. For CsO, the transitions -I were revealed, which are realized at pressures of 6.3 and 63 GPa. As a result, previously unknown structures were found for these oxides RbO--II and CsO-. According to the calculated phonon dispersion curves, the predicted structures are dynamically stable. Also, the P–T diagram for RbO and CsO was calculated for the first time. The electronic properties of the newly predicted high-pressure structures RbO--II and CsO- were investigated, and the band structures and electron density of states (DOS) were calculated.
期刊介绍:
The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.