在高压下稳定的 Rb2O 和 Cs2O 新结构

IF 3.1 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Anastassiya V. Mezentseva, Nursultan E. Sagatov, Pavel N. Gavryushkin, Dinara N. Sagatova
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The electronic properties of the newly predicted high-pressure structures Rb<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>P</mi><mi>n</mi><mi>m</mi><mi>a</mi></mrow></math></span>-II and Cs<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O-<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> were investigated, and the band structures and electron density of states (DOS) were calculated.</div></div>\",\"PeriodicalId\":10650,\"journal\":{\"name\":\"Computational Materials Science\",\"volume\":\"247 \",\"pages\":\"Article 113517\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computational Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927025624007389\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Materials Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927025624007389","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

在这项研究中,我们利用密度泛函理论中的进化算法搜索了 Rb2O 和 Cs2O 的稳定结构。在所研究的 0-100 GPa 压力范围内,对于 Rb2O,检测到了 Fm3̄m ↔ Pnma-I ↔ Pnma-II 转变,这分别是在 2.6 和 40 GPa 压力下实现的。至于 Cs2O,则发现了 R3̄m ↔ Pnma-I ↔ I4/mmm 的转变,它们分别在 6.3 和 63 GPa 的压力下实现。因此,发现了这些氧化物 Rb2O-Pnma-II 和 Cs2O-I4/mmm 以前未知的结构。根据声子色散曲线的计算结果,所预测的结构具有动态稳定性。此外,还首次计算了 Rb2O 和 Cs2O 的 P-T 图。研究了新预测的高压结构 Rb2O-Pnma-II 和 Cs2O-I4/mmm 的电子特性,并计算了带状结构和电子态密度(DOS)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

New structures of Rb2O and Cs2O stable at high pressures

New structures of Rb2O and Cs2O stable at high pressures
In this work, a search for stable structures of Rb2O and Cs2O was carried out using evolutionary algorithms within the density functional theory. In the studied pressure range of 0–100 GPa, for Rb2O, the transitions Fm3̄m Pnma-I Pnma-II were detected, which are realized at pressures of 2.6 and 40 GPa, respectively. For Cs2O, the transitions R3̄m Pnma-I I4/mmm were revealed, which are realized at pressures of 6.3 and 63 GPa. As a result, previously unknown structures were found for these oxides Rb2O-Pnma-II and Cs2O-I4/mmm. According to the calculated phonon dispersion curves, the predicted structures are dynamically stable. Also, the P–T diagram for Rb2O and Cs2O was calculated for the first time. The electronic properties of the newly predicted high-pressure structures Rb2O-Pnma-II and Cs2O-I4/mmm were investigated, and the band structures and electron density of states (DOS) were calculated.
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来源期刊
Computational Materials Science
Computational Materials Science 工程技术-材料科学:综合
CiteScore
6.50
自引率
6.10%
发文量
665
审稿时长
26 days
期刊介绍: The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.
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