G. M. Zirnik, S. A. Sozykin, A. S. Chernukha, I. A. Solizoda, S. A. Gudkova, D. A. Vinnik
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引用次数: 0
摘要
In2O3-Ga2O3-ZnO 三元氧化物具有电子应用前景。制造基于 In2O3-Ga2O3-ZnO 的晶体管的可行方法需要一种制备 X 射线纯粉末的技术。本文报告了所研究的有机络合剂对所获粉末形态影响的数据。结果表明,使用乙二醇比使用柠檬酸更可取,因为前者制备的粉末不含混合物相。
Indium–Gallium–Zinc Oxide: Influence of the Complexing Agent on the Structure
The In2O3–Ga2O3–ZnO ternary oxide is prospective for electronics applications. Promising methods of fabricating In2O3–Ga2O3–ZnO based transistors require a technique for the preparation of X-ray pure powders. Data on the influence of the studied organic complexing agent on the morphology of obtained powders are reported. It is shown that ethylene glycol is more preferable to use than citric acid since the powders prepared in the first case contain no admixture phases.
期刊介绍:
Journal is an interdisciplinary publication covering all aspects of structural chemistry, including the theory of molecular structure and chemical bond; the use of physical methods to study the electronic and spatial structure of chemical species; structural features of liquids, solutions, surfaces, supramolecular systems, nano- and solid materials; and the crystal structure of solids.