用于低噪声应用的 SiGe 高频脉宽调制技术

John Suarez
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引用次数: 0

摘要

本文详细介绍了利用硅锗 HBT 技术在 100 MHz 频率下进行脉宽调制的首次实验观测。通过在更高频率下执行脉宽调制(PWM),不需要的谐波成分(被理解为噪声)也同样被提升到更高频率。这样,PWM 控制器产生的噪声就能被提升到不再相关的频率。只要半导体技术支持高频波形生成,就能保证 PWM 控制器工作频率以下无噪音运行。现代硅锗 HBT 技术可轻松提供这种能力。本文还提供了一种集成电路设计,为最终用户增加了灵活性,并提供了模拟性能结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiGe high-frequency pulse-width modulation for low-noise applications
This paper details the first-known experimental observation of pulse-width modulation at 100 MHz using silicon-germanium HBT technology. By performing pulse-width modulation (PWM) at a higher frequency, undesired harmonic-components—which are interpreted as noise—are likewise raised to higher frequencies. In doing so, the noise generated by the PWM controller can be raised to frequencies at which it is no longer relevant. Noise-free operation is guaranteed below the operating frequency of the PWM controller, so long as the semiconductor technology supports high-frequency waveform generation. Such capability is readily provided by modern silicon-germanium HBT technology. The paper also provides an integrated-circuit design with additional flexibility for the end user, with simulated performance results.
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