Single-layer black phosphorus-enhanced narrowband perfect absorber in the terahertz range

In this paper, a narrowband absorber based on black phosphorus (BP) is proposed. By utilizing a single-layer BP, a Si structure with four etched holes, and a perfectly electrically conductive (PEC) plate, multi-band absorption can be achieved in the range of 3.8 THz to 5.0 THz. The location and absorbance of the three peaks are 4.32 THz (99.7 %), 4.53 THz (95.6 %), and 4.69 THz (56.7 %), respectively. The anisotropy of the BP structure leads to different absorption spectra when illuminated by TE and TM polarized light sources. Altering the electron doping in BP allows control over the position and intensity of absorption peaks. Upon examining the electric field distribution of the absorber, it is evident that the dominant physical mechanism is the localized surface plasmon resonance (LSPR). Overall, the monolayer BP absorber designed in this study can be utilized to construct a polarimetric sensor for infrared wavelengths. Additionally, it provides a valuable reference for 2D anisotropic plasma devices.