通过在铜衬底中掺入锌抑制 Cu/In/Cu 微凸块中界面空隙的形成

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Chemistry and Physics Pub Date : 2024-10-28 DOI:10.1016/j.matchemphys.2024.130090

Ta-Wei Lin, Zih-You Wu, Yin-Ku Lee, Zi-Xu Chen, Tsong-Pyng Perng, Jenq-Gong Duh

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引用次数: 0

摘要

为解决 3D-IC 中的翘曲问题，近年来开发了低温焊接技术，如铜/铟接合。然而，在原来的 Cu/In 接口上形成的 Kirkendall 空洞会导致连接可靠性下降。加入 Zn 后，Cu 的扩散通量受到抑制，大于 50 nm 的界面空隙数量大幅减少，上界面减少了 66%，下界面减少了 58%。本研究对 Cu-15Zn/In/Cu 系统进行了研究，该系统可被视为未来先进电子封装的理想选择。

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Inhibiting the formation of interfacial voids in Cu/In/Cu microbump via Zn doping into Cu substrate

To address warpage issues in 3D-IC, low temperature soldering technology such as Cu/In bonding has been developed in recent years. However, the formation of Kirkendall voids at the original Cu/In interface would lead to degradation of joint reliability. By adding Zn, the diffusional flux of Cu was inhibited, and the numbers of interfacial voids larger than 50 nm decreased substantially by 66 % at top interface and 58 % at bottom interface, respectively. In this study, Cu–15Zn/In/Cu system was investigated and could be regarded as a promising option for advanced electronic packaging in the future.

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来源期刊

Materials Chemistry and Physics 工程技术-材料科学：综合

CiteScore

8.70

自引率

4.30%

发文量

1515

审稿时长

69 days

期刊介绍： Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.