{"title":"快速载流子重组、纳米对撞和缺陷促进了 Z 型异质结的太阳能驱动氢进化反应","authors":"Ankita Kumari, and , Dibyajyoti Ghosh*, ","doi":"10.1021/acsaem.4c0210110.1021/acsaem.4c02101","DOIUrl":null,"url":null,"abstract":"<p >The vertical heterostructure between phase-different two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal monochalcogenides exhibits a promising photocatalytic performance. We combine several computational methods to explore catalytic processes for solar-driven hydrogen evolution reactions (HERs) on thermodynamically stable Mo<i>X</i><sub>2</sub>/SnS (<i>X</i> = S, Se, and Te). Except for MoTe<sub>2</sub>/SnS, these heterostructures have prominent staggered band alignment, significantly reducing the band gap and enhancing optical response to visible light irradiation. The time-domain Kohn–Sham (TD-KS) theory and nonadiabatic molecular dynamics (NAMD) depict fast interlayer electron–hole recombination between band edge states, revealing prominent Z-scheme heterojunction formation. The band-to-band relaxation eventually leads to long carrier lifetimes and high redox potential for photogenerated electrons in the SnS layer, enhancing HER catalytic performance. Moreover, the inner layer of SnS that noncovalently interacts with MoS<sub>2</sub> emerges as a superior photocatalytic surface compared to the traditionally investigated outer one. Nanoconfinement influences the hydrogen bond formation between the reactant H atom and <i>X</i> of Mo<i>X</i><sub>2</sub> (<i>X</i> = S and Se), boosting the catalytic process at the interlayer space. The defect engineering, especially the facile formation of Sn vacancy sites within the nanoconfined SnS layer emerge as the most thermodynamically favourable sites for enhancing the HER activity in the SnS layer. These vacancies introduce a unique local electronic environment that promotes the adsorption and activation of reaction intermediates. The significant dynamic fluctuations of the transient S–H bond at these sites further depict the optimal binding of the reactant, ensuring the best catalytic activity of Sn vacancies in the inner layer. The <i>in silico</i> study provides a detailed atomistic understanding of the hydrogen evolution process on metal chalcogenide heterostructures, suggesting their strategic design principles to boost photocatalytic activities.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fast Carrier Recombination, Nanoconfinement, and Defects Boost Solar-Driven Hydrogen Evolution Reactions at Z-Scheme Heterojunctions\",\"authors\":\"Ankita Kumari, and , Dibyajyoti Ghosh*, \",\"doi\":\"10.1021/acsaem.4c0210110.1021/acsaem.4c02101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The vertical heterostructure between phase-different two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal monochalcogenides exhibits a promising photocatalytic performance. We combine several computational methods to explore catalytic processes for solar-driven hydrogen evolution reactions (HERs) on thermodynamically stable Mo<i>X</i><sub>2</sub>/SnS (<i>X</i> = S, Se, and Te). Except for MoTe<sub>2</sub>/SnS, these heterostructures have prominent staggered band alignment, significantly reducing the band gap and enhancing optical response to visible light irradiation. The time-domain Kohn–Sham (TD-KS) theory and nonadiabatic molecular dynamics (NAMD) depict fast interlayer electron–hole recombination between band edge states, revealing prominent Z-scheme heterojunction formation. The band-to-band relaxation eventually leads to long carrier lifetimes and high redox potential for photogenerated electrons in the SnS layer, enhancing HER catalytic performance. Moreover, the inner layer of SnS that noncovalently interacts with MoS<sub>2</sub> emerges as a superior photocatalytic surface compared to the traditionally investigated outer one. Nanoconfinement influences the hydrogen bond formation between the reactant H atom and <i>X</i> of Mo<i>X</i><sub>2</sub> (<i>X</i> = S and Se), boosting the catalytic process at the interlayer space. The defect engineering, especially the facile formation of Sn vacancy sites within the nanoconfined SnS layer emerge as the most thermodynamically favourable sites for enhancing the HER activity in the SnS layer. These vacancies introduce a unique local electronic environment that promotes the adsorption and activation of reaction intermediates. The significant dynamic fluctuations of the transient S–H bond at these sites further depict the optimal binding of the reactant, ensuring the best catalytic activity of Sn vacancies in the inner layer. 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引用次数: 0
摘要
不同相位的二维(2D)过渡金属二掺杂物(TMDs)与金属单掺杂物之间的垂直异质结构具有良好的光催化性能。我们结合多种计算方法,探索了热力学稳定的 MoX2/SnS(X = S、Se 和 Te)上太阳能驱动的氢进化反应(HERs)的催化过程。除 MoTe2/SnS 外,这些异质结构具有突出的交错能带排列,可显著减小能带间隙并增强对可见光照射的光学响应。时域 Kohn-Sham(TD-KS)理论和非绝热分子动力学(NAMD)描述了带边态之间的快速层间电子-空穴重组,揭示了突出的 Z 型异质结形成。带间弛豫最终导致载流子寿命变长,SnS 层中光生电子的氧化还原电位变高,从而提高了 HER 催化性能。此外,与传统研究的外层相比,与 MoS2 发生非共价作用的 SnS 内层具有更优越的光催化表面。纳米细化影响了反应物 H 原子与 MoX2 的 X(X = S 和 Se)之间氢键的形成,促进了层间空间的催化过程。缺陷工程,尤其是在纳米封闭的 SnS 层中容易形成的 Sn 空位,成为提高 SnS 层中氢反应活性的最有利的热力学位点。这些空位引入了独特的局部电子环境,促进了反应中间产物的吸附和活化。这些位点上瞬时 S-H 键的明显动态波动进一步描述了反应物的最佳结合,确保了内层中锡空位的最佳催化活性。这项硅学研究提供了对金属瑀异质结构上氢进化过程的详细原子学理解,并提出了提高光催化活性的战略设计原则。
Fast Carrier Recombination, Nanoconfinement, and Defects Boost Solar-Driven Hydrogen Evolution Reactions at Z-Scheme Heterojunctions
The vertical heterostructure between phase-different two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal monochalcogenides exhibits a promising photocatalytic performance. We combine several computational methods to explore catalytic processes for solar-driven hydrogen evolution reactions (HERs) on thermodynamically stable MoX2/SnS (X = S, Se, and Te). Except for MoTe2/SnS, these heterostructures have prominent staggered band alignment, significantly reducing the band gap and enhancing optical response to visible light irradiation. The time-domain Kohn–Sham (TD-KS) theory and nonadiabatic molecular dynamics (NAMD) depict fast interlayer electron–hole recombination between band edge states, revealing prominent Z-scheme heterojunction formation. The band-to-band relaxation eventually leads to long carrier lifetimes and high redox potential for photogenerated electrons in the SnS layer, enhancing HER catalytic performance. Moreover, the inner layer of SnS that noncovalently interacts with MoS2 emerges as a superior photocatalytic surface compared to the traditionally investigated outer one. Nanoconfinement influences the hydrogen bond formation between the reactant H atom and X of MoX2 (X = S and Se), boosting the catalytic process at the interlayer space. The defect engineering, especially the facile formation of Sn vacancy sites within the nanoconfined SnS layer emerge as the most thermodynamically favourable sites for enhancing the HER activity in the SnS layer. These vacancies introduce a unique local electronic environment that promotes the adsorption and activation of reaction intermediates. The significant dynamic fluctuations of the transient S–H bond at these sites further depict the optimal binding of the reactant, ensuring the best catalytic activity of Sn vacancies in the inner layer. The in silico study provides a detailed atomistic understanding of the hydrogen evolution process on metal chalcogenide heterostructures, suggesting their strategic design principles to boost photocatalytic activities.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.