Hamidatu Alhassan , Voo Nyuk Yoong , Ying Woan Soon , Anwar Usman , Muhammad Saifullah Abu Bakar , Ashfaq Ahmed , Montri Luengchavanon
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Conversely, the biochar-derived GO (GO<sub>B</sub>) displayed a heterogenous structure with a less defined (001) plane and an emerging (002) plane corresponding to mixed hybridization states (sp<sup>2</sup>/sp<sup>3</sup>) and mixed crystallinity at different regions in the materials. Additionally, it retained excess aromatic carbons (C–H bond) on its basal plane increasing its disorderliness and defect density. As a result, despite the G bands showing greater incorporation of functional groups in GO<sub>G</sub>, GO<sub>B</sub> recorded a higher I<sub>D</sub>/I<sub>G</sub> ratio (0.95 vs. 0.93). By retaining a relatively higher proportion of sp<sup>2</sup> domains, GO<sub>B</sub> demonstrated enhanced light absorption through additional electronic transmission evident by its lower bandgap energy (2.93) compared to GO<sub>G</sub> (4.20), extending absorption into the visible range. Its improved properties were further characterized by enhanced conductivity, surface area, porosity, and decreased charge transfer and ion diffusion resistance. The study emphasizes that the nature of defects and their distribution, influenced by the precursor material can influence GO properties than those predicted by oxidation levels alone. 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引用次数: 0
摘要
本研究探讨了通过改进的 Hummers 方法合成和表征两种不同前体(石墨和热解相思木锯屑)衍生的氧化石墨烯 (GO)。正如假设的那样,商用石墨衍生的 GO(GOG)表现出更有序的结构,其特征是具有明确的衍射峰,层间间隔为 0.86 nm,结晶阶数为 8.18 nm,这与广泛的氧化作用相一致。相反,生物炭衍生的 GO(GOB)则显示出一种异质结构,其(001)平面不那么清晰,而(002)平面正在出现,这与材料中不同区域的混合杂化状态(sp2/sp3)和混合结晶度相对应。此外,它的基面上保留了过量的芳香碳(C-H 键),增加了其无序性和缺陷密度。因此,尽管 GOG 中的 G 带显示了更多的官能团,但 GOB 的 ID/IG 比值更高(0.95 对 0.93)。与 GOG(4.20)相比,GOB 的带隙能(2.93)更低,通过保留相对较高比例的 sp2 结构域,GOB 通过额外的电子传输增强了对光的吸收,从而将吸收范围扩大到可见光范围。其性能的改善还表现在导电性、表面积、孔隙率的提高,以及电荷转移和离子扩散阻力的降低。这项研究强调,缺陷的性质及其分布受前驱体材料的影响,对 GO 性能的影响超过了仅由氧化水平预测的影响。该研究为探索生物前驱体及其为特定应用定制 GO 性能的潜力开辟了一条新途径。
The differential influence of biochar and graphite precursors on the structural, optical, and electrochemical properties of graphene oxide
This study investigates the synthesis and characterization of graphene oxide (GO) derived from two distinct precursors: graphite and pyrolyzed acacia wood sawdust via a modified Hummers method. As hypothesized, the commercial graphite-derived GO (GOG) exhibited a more ordered structure characterized by a well-defined diffraction peak with interlayer separation of 0.86 nm and crystalline order of 8.18 nm, consistent with extensive oxidation. Conversely, the biochar-derived GO (GOB) displayed a heterogenous structure with a less defined (001) plane and an emerging (002) plane corresponding to mixed hybridization states (sp2/sp3) and mixed crystallinity at different regions in the materials. Additionally, it retained excess aromatic carbons (C–H bond) on its basal plane increasing its disorderliness and defect density. As a result, despite the G bands showing greater incorporation of functional groups in GOG, GOB recorded a higher ID/IG ratio (0.95 vs. 0.93). By retaining a relatively higher proportion of sp2 domains, GOB demonstrated enhanced light absorption through additional electronic transmission evident by its lower bandgap energy (2.93) compared to GOG (4.20), extending absorption into the visible range. Its improved properties were further characterized by enhanced conductivity, surface area, porosity, and decreased charge transfer and ion diffusion resistance. The study emphasizes that the nature of defects and their distribution, influenced by the precursor material can influence GO properties than those predicted by oxidation levels alone. It opens a new pathway to exploring bio-precursors and their potential in tailoring the properties of GO for specific applications.
期刊介绍:
Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.