Zhao Liu, Zelong Fan, Wenliang Li, Yuan Cao, Feihong Zhang, Zuoyan Qin, Zhenhua Sun, Baikui Li and Honglei Wu
{"title":"基于各种基底上具有纳米柱状结构的 AlN/a-Ga2O3 异质结的自供电太阳盲光电探测器","authors":"Zhao Liu, Zelong Fan, Wenliang Li, Yuan Cao, Feihong Zhang, Zuoyan Qin, Zhenhua Sun, Baikui Li and Honglei Wu","doi":"10.1039/D4CE00826J","DOIUrl":null,"url":null,"abstract":"<p >AlN/amorphous Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> heterojunction photodetectors were fabricated to achieve solar-blind UV detection. The responsivity and detectivity of the photodetector on a native substrate are 150% and 21.8% higher than those on a heterogeneous substrate at a 20 V bias, reaching 8.31 A W<small><sup>−1</sup></small> and 3.24 × 10<small><sup>14</sup></small> Jones, respectively. The built-in electric field enables self-powered UV detection without an external power supply. The addition of a nanocolumnar AlN structure significantly improved the performance of the photodetector, achieving a photo-to-dark current ratio and responsivity up to 2.11 × 10<small><sup>7</sup></small> and 9.17 mA W<small><sup>−1</sup></small> at 0 V bias. The fabricated photodetector has demonstrated self-powered and high-sensitivity UV detection.</p>","PeriodicalId":70,"journal":{"name":"CrystEngComm","volume":" 42","pages":" 6017-6024"},"PeriodicalIF":2.6000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-powered solar-blind photodetectors based on AlN/a-Ga2O3 heterojunctions with a nanocolumnar structure on various substrates\",\"authors\":\"Zhao Liu, Zelong Fan, Wenliang Li, Yuan Cao, Feihong Zhang, Zuoyan Qin, Zhenhua Sun, Baikui Li and Honglei Wu\",\"doi\":\"10.1039/D4CE00826J\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >AlN/amorphous Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> heterojunction photodetectors were fabricated to achieve solar-blind UV detection. The responsivity and detectivity of the photodetector on a native substrate are 150% and 21.8% higher than those on a heterogeneous substrate at a 20 V bias, reaching 8.31 A W<small><sup>−1</sup></small> and 3.24 × 10<small><sup>14</sup></small> Jones, respectively. The built-in electric field enables self-powered UV detection without an external power supply. The addition of a nanocolumnar AlN structure significantly improved the performance of the photodetector, achieving a photo-to-dark current ratio and responsivity up to 2.11 × 10<small><sup>7</sup></small> and 9.17 mA W<small><sup>−1</sup></small> at 0 V bias. The fabricated photodetector has demonstrated self-powered and high-sensitivity UV detection.</p>\",\"PeriodicalId\":70,\"journal\":{\"name\":\"CrystEngComm\",\"volume\":\" 42\",\"pages\":\" 6017-6024\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CrystEngComm\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2024/ce/d4ce00826j\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CrystEngComm","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/ce/d4ce00826j","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
为了实现日光盲紫外检测，我们制作了氮化铝/非晶Ga2O3异质结光电探测器。在 20 V 偏置下，原生衬底上光电探测器的响应率和检测率分别比异质衬底上的高出 150% 和 21.8%，达到 8.31 A W-1 和 3.24 × 1014 Jones。内置电场可实现自供电紫外检测，无需外部电源。纳米柱状氮化铝结构的加入大大提高了光电探测器的性能，在 0 V 偏置下，光暗电流比和响应率分别达到 2.11 × 107 和 9.17 mA W-1。所制造的光电探测器实现了自供电和高灵敏度紫外检测。
Self-powered solar-blind photodetectors based on AlN/a-Ga2O3 heterojunctions with a nanocolumnar structure on various substrates
AlN/amorphous Ga2O3 heterojunction photodetectors were fabricated to achieve solar-blind UV detection. The responsivity and detectivity of the photodetector on a native substrate are 150% and 21.8% higher than those on a heterogeneous substrate at a 20 V bias, reaching 8.31 A W−1 and 3.24 × 1014 Jones, respectively. The built-in electric field enables self-powered UV detection without an external power supply. The addition of a nanocolumnar AlN structure significantly improved the performance of the photodetector, achieving a photo-to-dark current ratio and responsivity up to 2.11 × 107 and 9.17 mA W−1 at 0 V bias. The fabricated photodetector has demonstrated self-powered and high-sensitivity UV detection.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
