Spintronic performance of bent zigzag phosphorene nanoribbons: effects of mechanical deformation and gate voltage

This study explores the spintronic properties of an innovative device incorporating in-plane bent zigzag phosphorene nanoribbons (ZPNRs). The device features ZPNRs with a channel length of 23.4 nm, bent into circular arcs with varying curvatures. We investigate the impact of mechanical deformation and gate voltage on spin-dependent properties, including the density of states, transmission coefficients, and the spin Seebeck coefficient (SSC). Our results indicate that the device exhibits a spin-semiconducting phase with a tunable energy gap, transport gap, and spin-dependent transport properties, influenced by the curvature. An increase in the bending parameter significantly enhances spin splitting, with the SSC reaching values up to 1.65 mV/K. Application of gate voltage further amplifies spin polarization and current, potentially achieving nearly fully spin-polarized currents. The significant impact of mechanical deformation and gate voltage on spintronic performance, showcasing the potential of bent ZPNRs for advanced applications.