POSS 中的半氟烷基取代基对原子氧暴露的影响

IF 3.1 2区 物理与天体物理 Q1 ENGINEERING, AEROSPACE
Kazuki Yukumatsu , Soichi Yokoyama , Aki Goto , Yugo Kimoto , Yutaka Ie
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引用次数: 0

摘要

由于最近的许多地球观测任务,极低地球轨道(VLEO)已成为卫星研究的一个紧迫课题。由于极低地球轨道中的原子氧(AO)密度高于低地球轨道,因此非常需要基于多面体低聚硅倍半氧烷(POSS)的抗AO材料。然而,POSS 侧链基团对 AO 暴露的影响尚不清楚。在这项研究中,我们重点研究了以半氟烷基作为侧链的改性 POSS 分子,因为氟碳基团(如氟化乙烯丙烯(FEP))具有很高的抗 AO 能力。我们制作了半氟烷基和烷基取代的 POSS 薄膜,并将其暴露在激光爆破 AO 源下。微天平测量结果表明,半氟烷基取代的 POSS 薄膜的质量损失大于烷基取代的 POSS 薄膜。X 射线光电子能谱测量结果表明,半氟烷基取代的 POSS 膜上形成的二氧化硅层比烷基取代的 POSS 膜厚。使用场发射扫描电子显微镜进行的表面观察显示,半氟烷基取代的 POSS 表面出现了微小裂纹。这些发现表明,带有氟取代基的 POSS 分子在暴露于 AO 时形成的二氧化硅层的 AO 阻隔性能值得仔细考虑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of semifluoroalkyl substituents in the POSS on atomic oxygen exposure
Due to the many recent Earth observation missions, very low Earth orbit (VLEO) have become a pressing topic for satellite research. Since the density of atomic oxygen (AO) in VLEO is higher than in low Earth orbit (LEO), the need for AO-resistant materials based on polyhedral oligomeric silsesquioxane (POSS) is strong. However, the effects of the side-chain groups in the POSS on AO exposure are unclear. In this study, we focused on POSS molecules modified with semifluoroalkyl groups as side chains because fluorocarbon groups, such as fluorinated ethylene propylene (FEP), are known to have high AO resistance. Semifluoroalkyl- and alkyl-substituted POSS films were fabricated and exposed to a laser-detonation AO source. Microbalance measurements showed that the mass losses of the semifluoroalkyl-substituted POSS films were larger than those of alkyl-substituted POSS films. X-ray photoelectron spectroscopy measurements showed that the silica layers formed on the semifluoroalkyl-substituted POSS were thicker than on alkyl-substituted POSS films. Surface observation using a field emission scanning electron microscope revealed microscale cracks on the surface of the semifluoroalkyl-substituted POSS. These findings indicate that POSS molecules with fluorine substituents warrant careful consideration of the AO-barrier performance of the silica layer formed during AO exposure.
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来源期刊
Acta Astronautica
Acta Astronautica 工程技术-工程:宇航
CiteScore
7.20
自引率
22.90%
发文量
599
审稿时长
53 days
期刊介绍: Acta Astronautica is sponsored by the International Academy of Astronautics. Content is based on original contributions in all fields of basic, engineering, life and social space sciences and of space technology related to: The peaceful scientific exploration of space, Its exploitation for human welfare and progress, Conception, design, development and operation of space-borne and Earth-based systems, In addition to regular issues, the journal publishes selected proceedings of the annual International Astronautical Congress (IAC), transactions of the IAA and special issues on topics of current interest, such as microgravity, space station technology, geostationary orbits, and space economics. Other subject areas include satellite technology, space transportation and communications, space energy, power and propulsion, astrodynamics, extraterrestrial intelligence and Earth observations.
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