同质缓冲层对 Al/Si(111)薄膜形态、微观结构和硬度的影响

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-26 DOI:10.1134/S1063784224060239

A. A. Lomov, D. M. Zakharov, M. A. Tarasov, A. M. Chekushkin, A. A. Tatarintsev, D. A. Kiselev, T. S. Ilyina, A. E. Seleznev

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引用次数: 0

摘要

本文介绍了对室温下通过磁控溅射法生长的铝薄膜进行补充研究的结果。这些薄膜是在标准硅（111）基底上获得的，基底表面在 400°C 温度下预先生长了一层 ∼20 nm 的铝（同质缓冲层）。通过 HRXRR、XRD、SEM、EDS、AFM 和纳米压头（ASTM）方法研究了铝薄膜的形貌、微观结构和硬度与基底表面状态的相互依存关系。结果表明，在基底表面形成同质缓冲层可以控制铝薄膜的结构和机械性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Influence of the Homobuffer Layer on the Morphology, Microstructure, and Hardness of Al/Si(111) Films

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Influence of the Homobuffer Layer on the Morphology, Microstructure, and Hardness of Al/Si(111) Films

The results of complementary studies of Al films grown by magnetron sputtering at room temperature are presented. The films were obtained on standard Si(111) substrates without and with a ∼20 nm aluminum (homobuffer) layer preliminarily grown on their surface at 400°C. The interdependence of the morphology, microstructure, and hardness of Al films on the state of the substrate surface was studied by the HRXRR, XRD, SEM, EDS, AFM, and Nano Indenter (ASTM) methods. It is shown that the formation of homobuffer layers on the substrate surface makes it possible to control the structural and mechanical properties of thin aluminum films.

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来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.