光子和体外辐射照射后的硅绝缘体结构微观形貌变化特征

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-26 DOI:10.1134/S1063784224060227

B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, V. V. Kirillova, E. A. Liashko, V. S. Makeev, A. R. Pervykh, N. D. Abrosimova, I. Yu. Zabavichev, A. S. Puzanov, E. V. Volkova, E. A. Tarasova, S. V. Obolensky

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引用次数: 0

摘要

文章介绍了 "绝缘体上硅 "结构在受到伽马射线和伽马中子辐射后的微观浮雕参数和电物理特性的研究结果。实验研究采用了原子力显微镜和伪 MOS 晶体管的方法。根据获得的数据，对辐射缺陷簇的平均尺寸和空间电荷面积进行了估算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure

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Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure

The article presents the results of studies of microrelief parameters and electrophysical characteristics of “silicon on insulator” structures after exposure to gamma and gamma neutron radiation. Experimental studies were carried out using the methods of atomic force microscopy and pseudo-MOS transistor. On the basis of the data obtained, an estimate was made of the average size and area of the space charge of clusters of radiation defects.

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来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.