通过分子束外延在 InP 基底上外延生长高应力 InGaAs/InAlAs 层

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-26 DOI:10.1134/S1063784224060021

V. V. Andryushkin, I. I. Novikov, A. G. Gladyshev, A. V. Babichev, L. Ya. Karachinsky, V. V. Dudelev, G. S. Sokolovskii, A. Yu. Egorov

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引用次数: 0

摘要

在本文中，我们介绍了通过分子束外延法在 InP 衬底上基于高应力 InGaAs/InAlAs 薄层外延生长高应力超晶格的特征研究。研究表明，与 InP 衬底晶格匹配的 InGaAs 和 InAlAs 体层的生长率并不能让我们精确地确定高应力 In0.36Al0.64As/In0.67Ga0.33As 应变补偿超晶格薄层的生长率，误差约为 10%。这种影响与 InGaAs 和 InAlAs 体层的生长温度不同有关，后者会影响生长表面的铟蒸发强度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy

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Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy

In this paper we present the study of the features of epitaxial growth highly stressed superlattices based on highly stressed thin InGaAs/InAlAs layers on InP substrates by the molecular beam epitaxy. It was shown that the growth rates of the InGaAs and InAlAs bulk layers lattice-matched to InP substrates do not allow us to precisely determine the growth rates of thin highly stressed In_0.36Al_0.64As/In_0.67Ga_0.33As strain compensated superlattices and the error is about 10 percent. The effect is related to the difference in the growth temperatures of InGaAs and InAlAs bulk layers, which affects the intensity of indium evaporation from the growth surface.

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来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.