Simon Nussbaum, Demetra Tsokkou, Aaron T. Frei, Dennis Friedrich, Jacques-E. Moser, Natalie Banerji, Jun-Ho Yum* and Kevin Sivula*,
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Thin films of (NDI-DAE)<sub>2</sub>PbI<sub>4</sub> show a quenched photoluminescence and transient absorption dynamics consistent with the formation of a charge transfer state or free charge carriers when either the inorganic or organic layer is photoexcited, suggesting the formation of a type II nanoheterostructure. Time-resolved microwave conductivity analysis supports free charge generation with sum mobilities up to 4 × 10<sup>–4</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. Mixed halide (NDI-DAE)<sub>2</sub>Pb(I<sub><i>x</i></sub>Br<sub>1–<i>x</i></sub>)<sub>4</sub> films show modified inorganic layer band gaps and a photoluminescent reversed type I nanoheterostructure with high bromide content (e.g., for <i>x</i> = 0). 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Thin films of (NDI-DAE)<sub>2</sub>PbI<sub>4</sub> show a quenched photoluminescence and transient absorption dynamics consistent with the formation of a charge transfer state or free charge carriers when either the inorganic or organic layer is photoexcited, suggesting the formation of a type II nanoheterostructure. Time-resolved microwave conductivity analysis supports free charge generation with sum mobilities up to 4 × 10<sup>–4</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. Mixed halide (NDI-DAE)<sub>2</sub>Pb(I<sub><i>x</i></sub>Br<sub>1–<i>x</i></sub>)<sub>4</sub> films show modified inorganic layer band gaps and a photoluminescent reversed type I nanoheterostructure with high bromide content (e.g., for <i>x</i> = 0). 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引用次数: 0
摘要
将有机半导体构件作为间隔阳离子并入层状杂化过氧化物中,为开发具有新型光电特性的新材料提供了机会,其中包括可实现电子和空穴传输空间分离的纳米超结。然而,确定具有合适结构和电子能级的有机物以选择性吸收可见光一直是该领域的一个挑战。在这项工作中,我们介绍了一种基于吸收可见光的萘-亚胺阳离子(NDI-DAE)的新型铅-卤化物基 Ruddlesden-Popper 包晶结构。(NDI-DAE)2PbI4 薄膜显示出淬灭光致发光和瞬态吸收动态,这与无机层或有机层受到光激发时形成的电荷转移态或自由电荷载流子相一致,表明形成了一种 II 型纳米异质结构。时间分辨微波电导分析支持自由电荷的产生,其总迁移率高达 4 × 10-4 cm2 V-1 s-1。混合卤化物 (NDI-DAE)2Pb(IxBr1-x)4 薄膜显示出改良的无机层带隙,并在溴含量较高时(如 x = 0 时)显示出光致发光的反向 I 型纳米异质结构。在 x = 0.5 时,瞬态吸收和微波电导测量结果有力地证明了 NDI-DAE 阳离子对可见光的选择性吸收会通过空穴传输到无机层(将光生电子留在有机层)产生分离的自由载流子,这是在稳定的层状过氧化物基器件中增强光收集和实现电荷载流子传输空间分离的重要一步。
Free Charge Carrier Generation by Visible-Light-Absorbing Organic Spacers in Ruddlesden–Popper Layered Perovskites
Incorporating organic semiconductor building blocks as spacer cations into layered hybrid perovskites provides an opportunity to develop new materials with novel optoelectronic properties, including nanoheterojunctions that afford spatial separation of electron and hole transport. However, identifying organics with suitable structure and electronic energy levels to selectively absorb visible light has been a challenge in the field. In this work, we introduce a new lead-halide-based Ruddlesden–Popper perovskite structure based on a visible-light-absorbing naphthalene-iminoimide cation (NDI-DAE). Thin films of (NDI-DAE)2PbI4 show a quenched photoluminescence and transient absorption dynamics consistent with the formation of a charge transfer state or free charge carriers when either the inorganic or organic layer is photoexcited, suggesting the formation of a type II nanoheterostructure. Time-resolved microwave conductivity analysis supports free charge generation with sum mobilities up to 4 × 10–4 cm2 V–1 s–1. Mixed halide (NDI-DAE)2Pb(IxBr1–x)4 films show modified inorganic layer band gaps and a photoluminescent reversed type I nanoheterostructure with high bromide content (e.g., for x = 0). At x = 0.5, transient absorption and microwave conductivity measurements provide strong evidence that selective visible-light absorbance by the NDI-DAE cation generates separated free carriers via hole transfer to the inorganic layer (leaving photogenerated electrons in the organic layer), which represents an important step toward enhancing light harvesting and affording the spatial separation of charge carrier transport in stable layered perovskite-based devices.
期刊介绍:
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