用于光电应用的硫化锌钴纳米薄膜的合成与表征

Joseph Onyeka Emegha , Kenneth Onyenike , Rita Omamuyovwi Jolayemi , Chioma Adaku Ejelonu , Frank Efe , Odunayo Tope Ojo
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引用次数: 0

摘要

利用化学沉积(CBD)技术在玻璃基底上制造了硫化锌钴(ZnxCo1-xS)薄膜。本研究采用醋酸锌、硫酸钴和硫代乙酰胺溶液分别作为锌、钴和硫的来源来生长薄膜。研究了合成薄膜在光电设备应用中的潜在用途。光学表征显示,薄膜表现出直接过渡,能隙在 3.350 至 3.360 eV 之间。随着锌浓度的变化,薄膜的吸光度沿波长光谱均匀下降。薄膜显示出较低的消光系数(0.0-0.23),这可能是由于浓度变化时材料内部的反射造成的。此外,还讨论了厚度、反射率和折射率随锌浓度的变化。随着锌浓度的增加,电阻率从 7.12×108 降至 5.94×108(Ω.cm)。根据晶体学光谱,ZnxCo1-xS 具有多晶结构,在不同取向上有各种不同的峰值。扫描电子显微镜显示,ZnxCo1-xS 薄膜的表面形态具有不同形状和大小的清晰纳米颗粒,这些颗粒分布均匀,并随着浓度的变化而发生显著变化。研究结果表明,化学沉积薄膜可用于一系列光电应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Synthesis and characterization of zinc cobalt sulphide nanofilms for optoelectronic applications

Synthesis and characterization of zinc cobalt sulphide nanofilms for optoelectronic applications
Zinc-cobalt sulphide (ZnxCo1xS) thin films were fabricated on glass substrates using the chemical bath deposition (CBD) technique. In this study, the films were grown employing solutions of zinc acetate, cobalt sulphate, and thioacetamide as the respective sources of zinc, cobalt, and sulphur. The synthesized films were investigated for their potential use in optoelectronic device applications. Optical characterization revealed that the films exhibited a direct transition with an energy gap ranging from 3.350 to 3.360 ​eV. As the zinc concentrations were changing, the absorbance of the films were decreasing uniformly along the wavelength spectra. The films exhibit a low extinction coefficient (0.0–0.23) that may be due to the internal reflections within the material as concentrations changes. Variations in the thickness, reflectance and refractive index with zinc concentrations were also discussed. The electrical resistivity was found to decrease from 7.12×108 to 5.94×108 (Ω.cm) with zinc concentrations. According to the crystallography spectrum, ZnxCo1xS has a polycrystalline structure with various distinct peaks at different orientations. Scanning electron microscopy shows that surface morphology of ZnxCo1xS films has a well-defined nanoparticles of different shapes and sizes which are uniformly distributed and are significantly transformed as a function of concentrations. The results demonstrate that the chemically deposited thin films can be engineered for a range of optoelectronic applications.
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