位错的单原子分辨振动光谱学

Hailing Jiang, Tao Wang, Zhenyu Zhang, Ruochen Shi, Xifan Xu, Bowen Sheng, Fang Liu, Weikun Ge, Ping Wang, Bo Shen, Peng Gao, Lucas R Lindsay, Xinqiang Wang
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引用次数: 0

摘要

位错散射产生的声子阻力通常分为短程核心相互作用和长程应变场相互作用。利用 GaN 位错的电子能量损失光谱,我们报告了在特定核心原子(短程)定位的振动模式和位错周围应变驱动的声子能量移动(长程)的观测结果。这项研究揭示了原子解析的位错振动光谱,从而为改进材料功能的工程设计提供了启示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-atom-resolved vibrational spectroscopy of a dislocation
Phonon resistance from dislocation scattering is often divided into short-range core interactions and long-range strain field interactions. Using electron energy-loss spectroscopy on a GaN dislocation, we report observations of vibrational modes localized at specific core atoms (short-range) and strain-driven phonon energy shifts around the dislocation (long-range). Ab initio calculations support these findings and draw out additional details. This study reveals atomically resolved vibrational spectra of dislocations, thus offering insights for engineering improved material functionalities.
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