钴/富勒烯 (C60) 双层体系中生长诱导的非常规磁各向异性;双晶粒斯托纳-沃尔法特模型的启示

Sonia Kaushik, Rakhul Raj, Pooja Gupta, R Venkatesh, Andrei Chumakov, Matthias Schwartzkopf, V Raghavendra Reddy, Dileep Kumar
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摘要

有机自旋电子学在自旋阀器件中的各种应用引起了科学界的兴趣。然而,由于金属-有机界面上复杂的自旋传输,高效的室温有机自旋阀器件尚未在实验中实现。本研究的重点是全面了解对提高器件性能和功能至关重要的界面特性。研究了沉积在富勒烯(C60)层上的超薄钴(Co)薄膜的结构和磁特性,以探讨金属有机双层结构中磁各向异性的起源。由于 C60 的机械软性,铁磁性 Co 原子在 C60 薄膜内部的渗透通过 X 射线反射率和二次离子质谱测量得到了证实。掠入射小角 X 射线散射和原子力显微镜提供了有关 Co/C60 双层膜的结构和形态特性的信息,不同 Co 层厚度的角度依赖性磁光 Kerr 效应测量提供了有关生长诱导的单轴磁各向异性的信息。与无机硅衬底相比,钴膜中的磁各向异性在 C60 层厚度为 25 {\AA} 时趋于发展,并随着钴层厚度的增加而进一步增强。沿标称硬轴的矫顽力和剩磁变化的异常行为可以用晶粒间交换耦合的双晶粒斯顿-沃尔夫模型来解释。通过克尔显微镜研究发现的磁畴非均匀空间分布进一步证实了这一点。这些异常现象可归因于磁晶各向异性的分布和 Co/C60 界面扩散层的形成所导致的不均匀应变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth-Induced Unconventional Magnetic Anisotropy in Co/Fullerene (C60) Bilayer Systems; Insights from a Two-Grain Stoner-Wohlfarth Model
Organic spintronics has drawn the interest of the science community due to various applications in spin-valve devices. However, an efficient room-temperature Organic Spin Valve device has not been experimentally realized due to the complicated spin transport at the metal-organic interfaces. The present study focuses on a comprehensive understanding of the interfacial properties essential for advancing device performance and functionality. The structural and magnetic properties of the ultra-thin Cobalt (Co) films deposited on the fullerene (C60) layer are studied to investigate the origin of magnetic anisotropy in the metal-organic bilayer structures. Due to the mechanical softness of C60, penetration of ferromagnetic Co atoms inside the C60 film is confirmed by the X-ray reflectivity and Secondary Ion Mass Spectroscopy measurements. Grazing incidence small-angle X-ray scattering and atomic force microscopy provided information regarding the structural and morphological properties of the Co/C60 bilayers, angular dependent Magneto-optic Kerr effect measurements with varying Co layer thickness provided information about the growth-induced uniaxial magnetic anisotropy. In contrast to the inorganic silicon substrates, magnetic anisotropy in Co film tends to develop at 25 {\AA} thickness on the C60 layer, which further increases with the thickness of Cobalt. The anomalous behavior in coercivity and remanence variation along the nominal hard axis is explained by a two-grain Stoner-Wohlfarth model with intergranular exchange coupling. It is further confirmed by a non-uniform spatial distribution of magnetic domains investigated through Kerr microscopy. These anomalies could be attributed to the distribution of magneto-crystalline anisotropy and inhomogeneous strain caused by the formation of a diffused layer at the Co/C60 interface.
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