掺杂铬的 V2O3 薄膜中跨越莫特转变的电子热传输与声子热传输

Johannes Mohr, Kiumars Aryana, Md. Rafiqul Islam, Dirk J. Wouters, Rainer Waser, Patrick E. Hopkins, Joyeeta Nag, Daniel Bedau
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引用次数: 0

摘要

了解掺铬 V2O3 的热导率对于优化存储器和神经形态设备的选择器设计至关重要。我们利用时域热反射技术测量了掺铬 V2O3 在不同浓度下的热导率,跨越了掺杂诱导的金属-绝缘体转变。此外,还研究了结晶和非晶相中不同的氧化学计量单位和薄膜厚度。铬掺杂浓度(0%-30%)和结晶度是影响热性能的主要因素,而沉积过程中氧流量(600-1400 ppm)的影响则可以忽略不计。我们的观察结果表明,即使在 V2O3 的金属相中,晶格贡献也是热传输的主要因素,电子对热传输没有明显影响。最后,我们在低温(80-450 K)下测量了无定形和结晶 V2O3 的热导率。我们的热导率测量结果与温度的函数关系显示,这两种物相都表现出与非晶态材料类似的行为,表明 V2O3 晶体相具有明显的声子散射效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic vs. phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition
Understanding the thermal conductivity of chromium doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium doped V2O3 across varying concentrations, spanning the doping induced metal-insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%-30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600-1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80-450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3.
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