利用阻抗谱模拟正向偏置硅 pn 二极管的扩散和耗尽电容

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED
P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio
{"title":"利用阻抗谱模拟正向偏置硅 pn 二极管的扩散和耗尽电容","authors":"P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio","doi":"10.1063/5.0230008","DOIUrl":null,"url":null,"abstract":"We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling the diffusion and depletion capacitances of a silicon pn diode in forward bias with impedance spectroscopy\",\"authors\":\"P. Casolaro, V. Izzo, G. Giusi, N. Wyrsch, A. Aloisio\",\"doi\":\"10.1063/5.0230008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0230008\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0230008","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

我们利用阻抗光谱学研究了正向偏压硅 pn 二极管的电容。尽管经过几十年的广泛研究,但文献中没有一个模型能充分描述偏压达到内置电压时的阻抗行为。我们以 1N4007 二极管为例,分析了 1 Hz 至 1 MHz 宽频率范围内的阻抗。我们的分析表明,结合两个模型可以有效地研究阻抗。在这两个模型中,耗尽电容都被假定为理想电容,其值与频率无关。其中一个模型考虑了扩散过程,而另一个模型则考虑了界面效应以及结点上的电势和电容分布。这种方法为了解 pn 结作为偏置电压函数的复杂电容行为提供了宝贵的见解。通过一组阻抗光谱数据,可以测量耗尽电容和扩散电容以及二极管的传输时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling the diffusion and depletion capacitances of a silicon pn diode in forward bias with impedance spectroscopy
We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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