Alessandro Rossi, Ian Buchanan, Alberto Astolfo, Martyna Michalska, Daniel Briglin, Anton Charman, Daniel Josell, Sandro Olivo, Ioannis Papakonstantinou
{"title":"制造用于高能 X 射线相位对比成像的超厚掩膜","authors":"Alessandro Rossi, Ian Buchanan, Alberto Astolfo, Martyna Michalska, Daniel Briglin, Anton Charman, Daniel Josell, Sandro Olivo, Ioannis Papakonstantinou","doi":"arxiv-2409.11237","DOIUrl":null,"url":null,"abstract":"X-ray phase contrast imaging (XPCI) provides higher sensitivity to contrast\nbetween low absorbing objects that can be invisible to conventional\nattenuation-based X-ray imaging. XPCI's main application has been so far\nfocused on medical areas at relatively low energies (< 100 keV). The\ntranslation to higher energy for industrial applications, where energies above\n150 keV are often needed, is hindered by the lack of masks/gratings with\nsufficiently thick gold septa. Fabricating such structures with apertures of\ntens of micrometers becomes difficult at depths greater than a few hundreds of\nmicrometers due to aspect ratio dependent effects such as anisotropic etching,\nand preferential gold (Au) deposition at the top of the apertures. In this\nwork, these difficulties are overcome by Deep Reactive Ion Etching optimized by\na stepped parameters approach and bismuth-mediated superconformal filling of\nAu, ultimately resulting in 500 micrometers deep silicon masks filled with Au\nat bulk density. The obtained masks, tested in an Edge Illumination XPCI system\nwith a conventional source and a photon-counting detector, show good agreement\nwith simulations at different energy thresholds. They also demonstrate a higher\nphase sensitivity for highly absorbing objects when compared to lower aspect\nratio masks, proving their potential for industrial non-destructive testing.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"7 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of Ultra-Thick Masks for X-ray Phase Contrast Imaging at Higher Energy\",\"authors\":\"Alessandro Rossi, Ian Buchanan, Alberto Astolfo, Martyna Michalska, Daniel Briglin, Anton Charman, Daniel Josell, Sandro Olivo, Ioannis Papakonstantinou\",\"doi\":\"arxiv-2409.11237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"X-ray phase contrast imaging (XPCI) provides higher sensitivity to contrast\\nbetween low absorbing objects that can be invisible to conventional\\nattenuation-based X-ray imaging. XPCI's main application has been so far\\nfocused on medical areas at relatively low energies (< 100 keV). The\\ntranslation to higher energy for industrial applications, where energies above\\n150 keV are often needed, is hindered by the lack of masks/gratings with\\nsufficiently thick gold septa. Fabricating such structures with apertures of\\ntens of micrometers becomes difficult at depths greater than a few hundreds of\\nmicrometers due to aspect ratio dependent effects such as anisotropic etching,\\nand preferential gold (Au) deposition at the top of the apertures. In this\\nwork, these difficulties are overcome by Deep Reactive Ion Etching optimized by\\na stepped parameters approach and bismuth-mediated superconformal filling of\\nAu, ultimately resulting in 500 micrometers deep silicon masks filled with Au\\nat bulk density. The obtained masks, tested in an Edge Illumination XPCI system\\nwith a conventional source and a photon-counting detector, show good agreement\\nwith simulations at different energy thresholds. They also demonstrate a higher\\nphase sensitivity for highly absorbing objects when compared to lower aspect\\nratio masks, proving their potential for industrial non-destructive testing.\",\"PeriodicalId\":501083,\"journal\":{\"name\":\"arXiv - PHYS - Applied Physics\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv - PHYS - Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/arxiv-2409.11237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.11237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
X 射线相位对比成像(XPCI)对低吸收物体之间的对比具有更高的灵敏度,而这些物体在传统的基于衰减的 X 射线成像中是看不到的。迄今为止,XPCI 的主要应用集中在能量相对较低(< 100 keV)的医疗领域。由于缺乏具有足够厚金隔板的掩膜/光栅,因此无法将其转化为更高能量的工业应用(通常需要 150 千伏以上的能量)。由于各向异性蚀刻和孔(Au)顶部优先金(Au)沉积等与长宽比相关的效应,在深度超过几百微米时,制造这种孔径为几十微米的结构变得十分困难。在这项工作中,通过阶梯参数优化的深度反应离子蚀刻法和铋介导的超共形金填充法克服了这些困难,最终得到了以大量密度填充金的 500 微米深硅掩模。在边缘照明 XPCI 系统中使用传统光源和光子计数探测器对所获得的掩膜进行了测试,结果显示在不同能量阈值下与模拟结果非常吻合。与较低纵横比的掩膜相比,它们对高吸收物体的相位灵敏度更高,这证明了它们在工业无损检测方面的潜力。
Fabrication of Ultra-Thick Masks for X-ray Phase Contrast Imaging at Higher Energy
X-ray phase contrast imaging (XPCI) provides higher sensitivity to contrast
between low absorbing objects that can be invisible to conventional
attenuation-based X-ray imaging. XPCI's main application has been so far
focused on medical areas at relatively low energies (< 100 keV). The
translation to higher energy for industrial applications, where energies above
150 keV are often needed, is hindered by the lack of masks/gratings with
sufficiently thick gold septa. Fabricating such structures with apertures of
tens of micrometers becomes difficult at depths greater than a few hundreds of
micrometers due to aspect ratio dependent effects such as anisotropic etching,
and preferential gold (Au) deposition at the top of the apertures. In this
work, these difficulties are overcome by Deep Reactive Ion Etching optimized by
a stepped parameters approach and bismuth-mediated superconformal filling of
Au, ultimately resulting in 500 micrometers deep silicon masks filled with Au
at bulk density. The obtained masks, tested in an Edge Illumination XPCI system
with a conventional source and a photon-counting detector, show good agreement
with simulations at different energy thresholds. They also demonstrate a higher
phase sensitivity for highly absorbing objects when compared to lower aspect
ratio masks, proving their potential for industrial non-destructive testing.