{"title":"设计和研究用于模拟/射频应用的无高斯掺杂结 SMDG 和 TMDG-TFET","authors":"Tamilarasi R and Karthik S","doi":"10.1088/2631-8695/ad777e","DOIUrl":null,"url":null,"abstract":"This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency (ft) and maximum-oscillation-frequency ( ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current (Ioff) of 9.6 fA and large-on-state current (ION) of 6.7 mA in Permittivity of high-k (HfO2 = 25) and low-k (SiO2 = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in ft, an 18% enhancement in and 17% increase in ION. These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.","PeriodicalId":11753,"journal":{"name":"Engineering Research Express","volume":"39 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications\",\"authors\":\"Tamilarasi R and Karthik S\",\"doi\":\"10.1088/2631-8695/ad777e\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency (ft) and maximum-oscillation-frequency ( ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current (Ioff) of 9.6 fA and large-on-state current (ION) of 6.7 mA in Permittivity of high-k (HfO2 = 25) and low-k (SiO2 = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in ft, an 18% enhancement in and 17% increase in ION. These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.\",\"PeriodicalId\":11753,\"journal\":{\"name\":\"Engineering Research Express\",\"volume\":\"39 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Engineering Research Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2631-8695/ad777e\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Engineering Research Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2631-8695/ad777e","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}
Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications
This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency (ft) and maximum-oscillation-frequency ( ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current (Ioff) of 9.6 fA and large-on-state current (ION) of 6.7 mA in Permittivity of high-k (HfO2 = 25) and low-k (SiO2 = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in ft, an 18% enhancement in and 17% increase in ION. These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.