Xiao-Kun Wang, Ranna Masheyeva, Yong-Xin Liu, Yuan-Hong Song, Peter Hartmann, Zoltán Donkó, Julian Schulze
{"title":"在定制电压波形驱动的 CF4 电容耦合等离子体中高效生成和控制 F 原子","authors":"Xiao-Kun Wang, Ranna Masheyeva, Yong-Xin Liu, Yuan-Hong Song, Peter Hartmann, Zoltán Donkó, Julian Schulze","doi":"10.1088/1361-6595/ad69c0","DOIUrl":null,"url":null,"abstract":"Neutral radicals generated by electron impact dissociation of the background gas play important roles in etching and deposition processes in low pressure capacitively coupled plasmas (CCPs). The rate and energy efficiency of producing a given radical depend on the space- and time-dependent electron energy distribution function (EEDF) in the plasma, as well as the electron energy dependent cross sections of the electron-neutral collisions that result in the generation of the radical. For the case of a CCP operated in CF<sub>4</sub> gas, we computationally demonstrate that the energy efficiency of generating neutral radicals, such as F atoms can be improved by controlling the EEDF by using tailored voltage waveforms (TVW) instead of single-frequency driving voltage waveforms and that separate control of the radical density and the ion energy can be realized by adjusting the waveform shape at constant peak-to-peak voltage. Such discharges are often used for industrial etching processes, in which the F atom density plays a crucial role for the etch rate. Different voltage waveform shapes, i.e. sinusoidal waveforms at low (13.56 MHz) and high (67.8 MHz) frequencies, peaks- and sawtooth-up TVWs, are used to study their effects on the energy cost / energy efficiency of F atom generation by PIC/MCC simulations combined with a stationary diffusion model. The F atom density is enhanced by increasing the voltage amplitude in the single frequency cases, while the energy cost per F atom generation increases, i.e. the energy efficiency decreases, because more power is dissipated to the ions, as the sheath voltages and the ion energy increase simultaneously. In contrast, using TVWs can result in a lower energy cost and provide separate control of the F atom density and the ion energy. This is explained by the fact that tailoring the waveform shape in this way allows to enhance the high-energy tail of the EEDF during the sheath expansion phase by inducing a non-sinusoidal sheath motion, which results in acceleration of more electrons to high enough energies to generate F atoms via electron-neutral collisions compared to the single frequency cases. Similar effects of TVWs are expected for the generation of other neutral radicals depending on the electron energy threshold and the specific consequences of TVWs on the EEDF under the discharge conditions of interest.","PeriodicalId":20192,"journal":{"name":"Plasma Sources Science and Technology","volume":"7 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Energy efficient F atom generation and control in CF4 capacitively coupled plasmas driven by tailored voltage waveforms\",\"authors\":\"Xiao-Kun Wang, Ranna Masheyeva, Yong-Xin Liu, Yuan-Hong Song, Peter Hartmann, Zoltán Donkó, Julian Schulze\",\"doi\":\"10.1088/1361-6595/ad69c0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Neutral radicals generated by electron impact dissociation of the background gas play important roles in etching and deposition processes in low pressure capacitively coupled plasmas (CCPs). The rate and energy efficiency of producing a given radical depend on the space- and time-dependent electron energy distribution function (EEDF) in the plasma, as well as the electron energy dependent cross sections of the electron-neutral collisions that result in the generation of the radical. For the case of a CCP operated in CF<sub>4</sub> gas, we computationally demonstrate that the energy efficiency of generating neutral radicals, such as F atoms can be improved by controlling the EEDF by using tailored voltage waveforms (TVW) instead of single-frequency driving voltage waveforms and that separate control of the radical density and the ion energy can be realized by adjusting the waveform shape at constant peak-to-peak voltage. Such discharges are often used for industrial etching processes, in which the F atom density plays a crucial role for the etch rate. Different voltage waveform shapes, i.e. sinusoidal waveforms at low (13.56 MHz) and high (67.8 MHz) frequencies, peaks- and sawtooth-up TVWs, are used to study their effects on the energy cost / energy efficiency of F atom generation by PIC/MCC simulations combined with a stationary diffusion model. The F atom density is enhanced by increasing the voltage amplitude in the single frequency cases, while the energy cost per F atom generation increases, i.e. the energy efficiency decreases, because more power is dissipated to the ions, as the sheath voltages and the ion energy increase simultaneously. In contrast, using TVWs can result in a lower energy cost and provide separate control of the F atom density and the ion energy. This is explained by the fact that tailoring the waveform shape in this way allows to enhance the high-energy tail of the EEDF during the sheath expansion phase by inducing a non-sinusoidal sheath motion, which results in acceleration of more electrons to high enough energies to generate F atoms via electron-neutral collisions compared to the single frequency cases. Similar effects of TVWs are expected for the generation of other neutral radicals depending on the electron energy threshold and the specific consequences of TVWs on the EEDF under the discharge conditions of interest.\",\"PeriodicalId\":20192,\"journal\":{\"name\":\"Plasma Sources Science and Technology\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasma Sources Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6595/ad69c0\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasma Sources Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6595/ad69c0","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
电子撞击背景气体解离产生的中性自由基在低压电容耦合等离子体(CCP)的蚀刻和沉积过程中发挥着重要作用。产生特定自由基的速率和能效取决于等离子体中与空间和时间相关的电子能量分布函数(EEDF),以及导致产生自由基的电子-中性碰撞的电子能量相关截面。对于在 CF4 气体中运行的 CCP,我们通过计算证明,通过使用定制电压波形(TVW)而不是单频驱动电压波形来控制 EEDF,可以提高产生中性自由基(如 F 原子)的能量效率;通过调整恒定峰-峰电压下的波形形状,可以实现自由基密度和离子能量的单独控制。这种放电通常用于工业蚀刻工艺,其中 F 原子密度对蚀刻速率起着至关重要的作用。我们使用不同的电压波形,即低频(13.56 MHz)和高频(67.8 MHz)的正弦波形、峰值和锯齿形的 TVW,通过 PIC/MCC 模拟结合静态扩散模型,研究它们对 F 原子生成的能源成本/能源效率的影响。在单频情况下,通过增加电压振幅可以提高 F 原子密度,但由于鞘电压和离子能量同时增加,更多的功率会耗散到离子上,因此产生每个 F 原子的能量成本会增加,即能量效率会降低。相比之下,使用 TVW 可以降低能量成本,并对 F 原子密度和离子能量进行单独控制。这是因为以这种方式定制波形可以在鞘膨胀阶段通过诱导非正弦鞘运动来增强 EEDF 的高能尾部,从而使更多电子加速到足够高的能量,从而通过电子-中性碰撞产生 F 原子。根据电子能量阈值以及 TVW 在相关放电条件下对 EEDF 的具体影响,预计 TVW 对其他中性自由基的生成也会产生类似的影响。
Energy efficient F atom generation and control in CF4 capacitively coupled plasmas driven by tailored voltage waveforms
Neutral radicals generated by electron impact dissociation of the background gas play important roles in etching and deposition processes in low pressure capacitively coupled plasmas (CCPs). The rate and energy efficiency of producing a given radical depend on the space- and time-dependent electron energy distribution function (EEDF) in the plasma, as well as the electron energy dependent cross sections of the electron-neutral collisions that result in the generation of the radical. For the case of a CCP operated in CF4 gas, we computationally demonstrate that the energy efficiency of generating neutral radicals, such as F atoms can be improved by controlling the EEDF by using tailored voltage waveforms (TVW) instead of single-frequency driving voltage waveforms and that separate control of the radical density and the ion energy can be realized by adjusting the waveform shape at constant peak-to-peak voltage. Such discharges are often used for industrial etching processes, in which the F atom density plays a crucial role for the etch rate. Different voltage waveform shapes, i.e. sinusoidal waveforms at low (13.56 MHz) and high (67.8 MHz) frequencies, peaks- and sawtooth-up TVWs, are used to study their effects on the energy cost / energy efficiency of F atom generation by PIC/MCC simulations combined with a stationary diffusion model. The F atom density is enhanced by increasing the voltage amplitude in the single frequency cases, while the energy cost per F atom generation increases, i.e. the energy efficiency decreases, because more power is dissipated to the ions, as the sheath voltages and the ion energy increase simultaneously. In contrast, using TVWs can result in a lower energy cost and provide separate control of the F atom density and the ion energy. This is explained by the fact that tailoring the waveform shape in this way allows to enhance the high-energy tail of the EEDF during the sheath expansion phase by inducing a non-sinusoidal sheath motion, which results in acceleration of more electrons to high enough energies to generate F atoms via electron-neutral collisions compared to the single frequency cases. Similar effects of TVWs are expected for the generation of other neutral radicals depending on the electron energy threshold and the specific consequences of TVWs on the EEDF under the discharge conditions of interest.