{"title":"稀土杂质在镧中的电阻率(第一部分)","authors":"Viviana P. Ramunni","doi":"arxiv-2409.06400","DOIUrl":null,"url":null,"abstract":"In this work we study the temperature independent resistivity of rare-earth\nmagnetic (Gd, Tb, Dy) and non-magnetic (Lu) impurities diluted in dhcp\nLanthanum. We considered a two-band system where the conduction is entirely due\nto $s$-electrons while the screening of the charge difference induced by the\nimpurity is made by the $d$-electrons. We obtain an expression of the\nresistivity using the $T$-matrix formalism from the Dyson equation. As the\nelectronic properties depend strongly on the band structure, we have considered\ntwo types of bands structure, a \"parabolic\" band and a more realistic one\ncalculated by first principles with VASP. We verify that the exchange\nparameters appearing as cross products strongly affect the magnitude of the\nspin resistivity term; And that the role of the band structure in resonant\nscattering or virtual bound states, depends on the band structure. Our study,\nalso includes the influence of the translational symmetry breaking and the\nexcess charge introduced by the {\\it rare-earth} impurity on the resitivity.","PeriodicalId":501234,"journal":{"name":"arXiv - PHYS - Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The resistivity of rare earth impurities diluted in Lanthanum (Part I)\",\"authors\":\"Viviana P. Ramunni\",\"doi\":\"arxiv-2409.06400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we study the temperature independent resistivity of rare-earth\\nmagnetic (Gd, Tb, Dy) and non-magnetic (Lu) impurities diluted in dhcp\\nLanthanum. We considered a two-band system where the conduction is entirely due\\nto $s$-electrons while the screening of the charge difference induced by the\\nimpurity is made by the $d$-electrons. We obtain an expression of the\\nresistivity using the $T$-matrix formalism from the Dyson equation. As the\\nelectronic properties depend strongly on the band structure, we have considered\\ntwo types of bands structure, a \\\"parabolic\\\" band and a more realistic one\\ncalculated by first principles with VASP. We verify that the exchange\\nparameters appearing as cross products strongly affect the magnitude of the\\nspin resistivity term; And that the role of the band structure in resonant\\nscattering or virtual bound states, depends on the band structure. Our study,\\nalso includes the influence of the translational symmetry breaking and the\\nexcess charge introduced by the {\\\\it rare-earth} impurity on the resitivity.\",\"PeriodicalId\":501234,\"journal\":{\"name\":\"arXiv - PHYS - Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv - PHYS - Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/arxiv-2409.06400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.06400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中,我们研究了稀土磁性(Gd、Tb、Dy)和非磁性(Lu)杂质稀释在 dhcpLanthanum 中与温度无关的电阻率。我们考虑了一个双带系统,其中传导完全由 s 电子完成,而杂质引起的电荷差的屏蔽则由 d 电子完成。我们利用戴森方程中的 $T$ 矩阵形式得到了电阻率的表达式。由于电子特性在很大程度上取决于能带结构,我们考虑了两种能带结构,一种是 "抛物线 "能带,另一种是用 VASP 根据第一性原理计算的更现实的能带。我们验证了作为交叉积累出现的交换参数会强烈影响自旋电阻率项的大小;而且带状结构在共振散射或虚拟束缚态中的作用取决于带状结构。我们的研究还包括平移对称性破缺和{it稀土}杂质引入的额外电荷对电阻率的影响。
The resistivity of rare earth impurities diluted in Lanthanum (Part I)
In this work we study the temperature independent resistivity of rare-earth
magnetic (Gd, Tb, Dy) and non-magnetic (Lu) impurities diluted in dhcp
Lanthanum. We considered a two-band system where the conduction is entirely due
to $s$-electrons while the screening of the charge difference induced by the
impurity is made by the $d$-electrons. We obtain an expression of the
resistivity using the $T$-matrix formalism from the Dyson equation. As the
electronic properties depend strongly on the band structure, we have considered
two types of bands structure, a "parabolic" band and a more realistic one
calculated by first principles with VASP. We verify that the exchange
parameters appearing as cross products strongly affect the magnitude of the
spin resistivity term; And that the role of the band structure in resonant
scattering or virtual bound states, depends on the band structure. Our study,
also includes the influence of the translational symmetry breaking and the
excess charge introduced by the {\it rare-earth} impurity on the resitivity.