在硅光子 CMOS 平台上采用 P+/P/N/P/N/N+ 掺杂曲线的高性能三端晶闸管 RAM

arXiv - EE - Systems and Control Pub Date : 2024-09-11 DOI:arxiv-2409.07598

Changseob Lee, Ikhyeon Kwon, Anirban Samanta, Siwei Li, S. J. Ben Yoo

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引用次数: 0

摘要

在硅光子平台上实验演示了具有掺杂曲线（P+PNPNN+）的 3T TRAM。通过使用额外的植入层，与传统结构（PNPN）相比，该器件具有出色的存储性能。利用 TCAD 反映了物理行为，并通过模型描述了高速存储器的操作。

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High Performance Three-Terminal Thyristor RAM with a P+/P/N/P/N/N+ Doping Profile on a Silicon-Photonic CMOS Platform

3T TRAM with doping profile (P+PNPNN+) is experimentally demonstrated on a silicon photonic platform. By using additional implant layers, this device provides excellent memory performance compared to the conventional structure (PNPN). TCAD is used to reflect the physical behavior, and the high-speed memory operations are described through the model.

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arXiv - EE - Systems and Control

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