局部阳极氧化硅以创建横杆结构

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-02 DOI:10.1134/s1063784224010316

V. V. Polyakova, A. V. Saenko

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引用次数: 0

摘要

摘要本文展示了在硅衬底上以横条结构形式创建神经矩阵的可能性。建议使用局部阳极氧化法形成一组纳米导体形式的横条结构，这些导体之间有一层氧化钛，在外加电压的作用下能够改变其导电性。目前正在研究硅和钛局部阳极氧化法的技术参数，以便以忆阻器结构的形式实施这种神经矩阵的元件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Local Anodic Oxidation of Silicon for Create Crossbar Architecture

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Local Anodic Oxidation of Silicon for Create Crossbar Architecture

Abstract

Paper present possibility of creation a neuromatrix in the form crossbar architecture on a silicon substrate is shown. Crossbar architecture in the form of a set of nanosized conductors, between which there is a layer of titanium oxide, capable of changing its conductivity under the action of the applied voltage, it is proposed to form using the metho d of local anodic oxidation. The results is present of the study technological parameters of the metho d of local anodic oxidation silicon and titanium for the implementation of the elements of this neuromatrix in the form of a memristor structures.

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来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.