使用掺硼金刚石电极的金刚石砧电池合成的 Th$_3$P$_4$ 型 In$_{3-x}$S$_4$ 在 20 K 时出现超导电性

Ryo Matsumoto, Kazuki Yamane, Terumasa Tadano, Kensei Terashima, Toru Shinmei, Tetsuo Irifune, Yoshihiko Takano
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引用次数: 0

摘要

通过高压技术操纵晶体结构来探索瞬变相超导体以达到高临界温度($T_c$)的研究引起了材料科学领域的极大兴趣。在这项研究中,我们报告了在 Th$_{3-x}$S$_4$ 型立方 In$_{3-x}$S$_4$ 的瞬变相中出现的新型超导电性,这种超导电性在 20 K、45 GPa 条件下具有显著的高 T_c$。原位结构分析表明,在不加热的情况下,In$_{3-x}$S$_4$ 部分出现在 40 GPa 以上。高压退火处理使其完全转变为 Th$_3$P$_4$ 型结构,并且随着退火温度的升高,In$_{3-x}$S$_4$ 中 x 的缺陷浓度降低。电子能带计算表明,硫带和铟带组成的高密度态位于费米能附近的导带底部。超导硫化物 In$_{3-x}$S$_4$ 中创纪录的高 T_c$ 值加速了人们利用晶体结构的灵活性进一步探索 Th$_3$P$_4$ 型立方体家族中的高 T_c$ 材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Emergence of Superconductivity at 20 K in Th$_3$P$_4$-type In$_{3-x}$S$_4$ Synthesized by Diamond Anvil Cell with Boron-doped Diamond Electrodes
The exploration of superconductors in metastable phases by manipulating crystal structures through high-pressure techniques has attracted significant interest in materials science to achieve a high critical temperature ($T_c$). In this study, we report an emergence of novel superconductivity in a metastable phase of Th$_3$P$_4$-type cubic In$_{3-x}$S$_4$ with remarkably high $T_c$ at 20 K under 45 GPa by using an originally designed diamond anvil cell equipped with boron-doped diamond electrodes, which can perform a high-pressure synthesis and an in-situ electrical transport measurement simultaneously. In-situ structural analysis indicates that the In$_{3-x}$S$_4$ appears partially above 40 GPa without heating. The high-pressure annealing treatment induces complete transformation to the Th$_3$P$_4$-type structure, and the defected concentration of x in In$_{3-x}$S$_4$ decreases with increasing annealing temperature. The $T_c$ in In$_{3-x}$S$_4$ is maximized at x = 0 and approaches 20 K. Electronic band calculations show that the high density of states composed of sulfur and indium bands are located at the conduction band bottom near Fermi energy. The record high $T_c$ in In$_{3-x}$S$_4$ among superconducting sulfides accelerates the further exploration of high $T_c$ materials within the Th$_3$P$_4$-type cubic family by using flexibility in crystal structure.
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