A. S. Ianovskaia, G. A. Bobkov, A. M. Bobkov, I. V. Bobkova
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引用次数: 0
摘要
超导体/铁磁体(S/F)异质结构中的磁接近效应会导致超导有序参数的抑制和局部电子态密度(LDOS)自旋分裂的出现。在具有大量原子层的经典薄膜异质结构中,这种现象已经得到了很好的研究。然而,随着二维材料的发现为新型功能材料的设计带来了前所未有的机遇,人们开始深入研究范德华(vdW)S/F 异质结构中的邻近效应。研究特别表明,在单层 S/ 单层 F 异质结构中,邻近效应的物理机制是由其电子态的杂化决定的,这使得其可观察到的表现形式与经典结果完全不同,并允许使用栅极电压对邻近效应进行有效控制。在这里,我们证明了邻近效应的杂化机制在不同超导层数的 vdW S/Fheterostructures 中磁性邻近效应的演化过程中得到了清晰的体现。特别是,超导层的数量决定了有序参数对铁磁交换场和门控的依赖性的最小值数量。LDOS 的自旋分裂非常不寻常,一般无法用有效的泽曼场来描述。本文详细讨论了这种行为的物理原因和可能的实验表现。
Magnetic proximity effect in superconductor/ferromagnet van der Waals heterostructures: dependence on the number of superconducting monolayers
The magnetic proximity effect in superconductor/ferromagnet (S/F)
heterostructures leads to a suppression of the superconducting order parameter
and appearance of spin splitting of the local electronic density of states
(LDOS). In classical thin-film heterostructures with a large number of atomic
layers it has been well studied. However, with the discovery of 2D materials
that open up unprecedented opportunities for the design of new functional
materials, an intensive study of proximity effects in van der Waals (vdW) S/F
heterostructures has begun. In particular, it was shown that in monolayer
S/monolayer F heterostructures the physical mechanism of the proximity effect
is determined by the hybridization of their electronic states, what makes its
observable manifestations completely different from the classical results and
allows for effective control over the proximity effect using gate voltage. Here
we demonstrate that the hybridization mechanism of the proximity effect clearly
manifests itself in the evolution of the magnetic proximity effect in vdW S/F
heterostructures with varying number of the superconducting layers. In
particular, the number of superconducting layers determines the number of
minima in the dependence of the order parameter on the ferromagnetic exchange
field and gating. The spin splitting of the LDOS is very unusual and in general
cannot be described by an effective Zeeman field. Physical reasons of such a
behavior and possible experimental manifestations are discussed in details.