Jingyu Yao, Haohao Sheng, Ruihan Zhang, Rongtian Pang, Jin-Jian Zhou, Quansheng Wu, Hongming Weng, Xi Dai, Zhong Fang, Zhijun Wang
{"title":"Ta2Pd3Te5 单层中的激子不稳定性","authors":"Jingyu Yao, Haohao Sheng, Ruihan Zhang, Rongtian Pang, Jin-Jian Zhou, Quansheng Wu, Hongming Weng, Xi Dai, Zhong Fang, Zhijun Wang","doi":"10.1088/0256-307x/41/9/097101","DOIUrl":null,"url":null,"abstract":"By systematic theoretical calculations, we reveal an excitonic insulator (EI) in the Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> monolayer. The bulk Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke–Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization <italic toggle=\"yes\">α</italic><sub>2D</sub> would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the <italic toggle=\"yes\">GW</italic> plus Bethe–Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> monolayer is an excitonic insulator without structural distortion.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"24 2 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Excitonic Instability in Ta2Pd3Te5 Monolayer\",\"authors\":\"Jingyu Yao, Haohao Sheng, Ruihan Zhang, Rongtian Pang, Jin-Jian Zhou, Quansheng Wu, Hongming Weng, Xi Dai, Zhong Fang, Zhijun Wang\",\"doi\":\"10.1088/0256-307x/41/9/097101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By systematic theoretical calculations, we reveal an excitonic insulator (EI) in the Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> monolayer. The bulk Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke–Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization <italic toggle=\\\"yes\\\">α</italic><sub>2D</sub> would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the <italic toggle=\\\"yes\\\">GW</italic> plus Bethe–Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta<sub>2</sub>Pd<sub>3</sub>Te<sub>5</sub> monolayer is an excitonic insulator without structural distortion.\",\"PeriodicalId\":10344,\"journal\":{\"name\":\"Chinese Physics Letters\",\"volume\":\"24 2 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/0256-307x/41/9/097101\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/0256-307x/41/9/097101","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
By systematic theoretical calculations, we reveal an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke–Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization α2D would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the GW plus Bethe–Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta2Pd3Te5 monolayer is an excitonic insulator without structural distortion.
期刊介绍:
Chinese Physics Letters provides rapid publication of short reports and important research in all fields of physics and is published by the Chinese Physical Society and hosted online by IOP Publishing.