掺杂诱导的 MoS2电极氢气进化增强效应

Sander Ø. Hanslin, Hannes Jónsson, Jaakko Akola
{"title":"掺杂诱导的 MoS2电极氢气进化增强效应","authors":"Sander Ø. Hanslin, Hannes Jónsson, Jaakko Akola","doi":"arxiv-2409.02749","DOIUrl":null,"url":null,"abstract":"Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2\nwith Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex\nwhere both hydrogen atoms are interacting with the surface. Stabilization of\nsuch a complex affects the competing Volmer-Heyrovsky (direct H2 release) and\nVolmer-Tafel (H2* intermediate) pathways. The resulting evolution proceeds with\na very small overpotential for all dopants ($\\eta$ = 0.1 to 0.2 V) at 25% edge\nsubstitution, significantly reduced from the already low $\\eta$ = 0.27 V for\nthe undoped edge. At full edge substitution, Co-MoS2 remains highly active\n($\\eta$ = 0.18 V) while Ni- and Pt-MoS2 are deactivated ($\\eta$ = 0.4 to 0.5 V)\ndue to unfavorable interaction with H2*. Instead of the single S-vacancy, the\nsite of intrinsic activity in the basal plane was found to be the\nundercoordinated central Mo-atom in threefold S-vacancy configurations,\nenabling hydrogen evolution with $\\eta$ = 0.52 V via a H2* intermediate. The\nimpurity atoms interact favorably with the intrinsic sulfur vacancies on the\nbasal plane, stabilizing but simultaneously deactivating the triple vacancy\nconfiguration. The calculated shifts in overpotential are consistent with\nreported measurements, and the dependence on doping level may explain\nvariations in experimental observations.","PeriodicalId":501369,"journal":{"name":"arXiv - PHYS - Computational Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Doping-Induced Enhancement of Hydrogen Evolution at MoS2 Electrodes\",\"authors\":\"Sander Ø. Hanslin, Hannes Jónsson, Jaakko Akola\",\"doi\":\"arxiv-2409.02749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2\\nwith Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex\\nwhere both hydrogen atoms are interacting with the surface. Stabilization of\\nsuch a complex affects the competing Volmer-Heyrovsky (direct H2 release) and\\nVolmer-Tafel (H2* intermediate) pathways. The resulting evolution proceeds with\\na very small overpotential for all dopants ($\\\\eta$ = 0.1 to 0.2 V) at 25% edge\\nsubstitution, significantly reduced from the already low $\\\\eta$ = 0.27 V for\\nthe undoped edge. At full edge substitution, Co-MoS2 remains highly active\\n($\\\\eta$ = 0.18 V) while Ni- and Pt-MoS2 are deactivated ($\\\\eta$ = 0.4 to 0.5 V)\\ndue to unfavorable interaction with H2*. Instead of the single S-vacancy, the\\nsite of intrinsic activity in the basal plane was found to be the\\nundercoordinated central Mo-atom in threefold S-vacancy configurations,\\nenabling hydrogen evolution with $\\\\eta$ = 0.52 V via a H2* intermediate. The\\nimpurity atoms interact favorably with the intrinsic sulfur vacancies on the\\nbasal plane, stabilizing but simultaneously deactivating the triple vacancy\\nconfiguration. The calculated shifts in overpotential are consistent with\\nreported measurements, and the dependence on doping level may explain\\nvariations in experimental observations.\",\"PeriodicalId\":501369,\"journal\":{\"name\":\"arXiv - PHYS - Computational Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv - PHYS - Computational Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/arxiv-2409.02749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Computational Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.02749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

对含有钴、镍和铂杂质的 MoS2 上的氢进化反应(HER)进行的速率理论和 DFT 计算表明,双氢(H2*)复合物的重要性不言而喻,在这种复合物中,两个氢原子都与表面相互作用。这种复合物的稳定会影响相互竞争的 Volmer-Heyrovsky(直接释放 H2)和 Volmer-Tafel(H2* 中间体)途径。在 25% 的边缘取代率下,所有掺杂剂的过电位($\ea$ = 0.1 至 0.2 V)都非常小,这比未掺杂边缘时已经很低的($\ea$ = 0.27 V)过电位大大降低。在边缘完全取代时,Co-MoS2 仍然保持高活性($\eeta$ = 0.18 V),而 Ni- 和 Pt-MoS2 则由于与 H2* 的不利相互作用而失活($\eeta$ = 0.4 至 0.5 V)。研究发现,基底面上的内在活性位点不是单一的 S-空位,而是三倍 S-空位构型中的欠配位中心 Mo 原子,通过 H2* 中间体实现了 $\eta$ = 0.52 V 的氢演化。杂质原子与基底面上的固有硫空位发生了有利的相互作用,稳定了三重空位构型,但同时也使其失活。计算得出的过电位偏移与报告的测量结果一致,而对掺杂水平的依赖可能解释了实验观察结果的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Doping-Induced Enhancement of Hydrogen Evolution at MoS2 Electrodes
Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2 with Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex where both hydrogen atoms are interacting with the surface. Stabilization of such a complex affects the competing Volmer-Heyrovsky (direct H2 release) and Volmer-Tafel (H2* intermediate) pathways. The resulting evolution proceeds with a very small overpotential for all dopants ($\eta$ = 0.1 to 0.2 V) at 25% edge substitution, significantly reduced from the already low $\eta$ = 0.27 V for the undoped edge. At full edge substitution, Co-MoS2 remains highly active ($\eta$ = 0.18 V) while Ni- and Pt-MoS2 are deactivated ($\eta$ = 0.4 to 0.5 V) due to unfavorable interaction with H2*. Instead of the single S-vacancy, the site of intrinsic activity in the basal plane was found to be the undercoordinated central Mo-atom in threefold S-vacancy configurations, enabling hydrogen evolution with $\eta$ = 0.52 V via a H2* intermediate. The impurity atoms interact favorably with the intrinsic sulfur vacancies on the basal plane, stabilizing but simultaneously deactivating the triple vacancy configuration. The calculated shifts in overpotential are consistent with reported measurements, and the dependence on doping level may explain variations in experimental observations.
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