采用 22 纳米 FDSOI CMOS 的硅自旋质子控制和读出电路

Raffaele R. Severino, Michele Spasaro, Domenico Zito
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引用次数: 0

摘要

本文研究了用于控制和读出电子/空穴自旋量子比特的微波和毫米波集成电路的实现,电子/空穴自旋量子比特是未来新兴量子计算技术的基本构件。特别是,本文总结了电子/空穴自旋量子比特最相关的读出和控制技术,探讨了可行性,并报告了两个模块的初步仿真结果:跨阻抗放大器(TIA)和脉冲发生器(PG)。跨阻抗放大器在 18 GHz 的 -3dB 带宽内具有 108.5 dBOhm 的跨阻抗增益,10 GHz 时的输入参考噪声电流谱密度为 0.89 pA/根(Hz)。PG 可提供最小持续时间为 20 ps 的毫米波正弦脉冲。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS
This paper investigates the implementation of microwave and mm-wave integrated circuits for control and readout of electron/hole spin qubits, as elementary building blocks for future emerging quantum computing technologies. In particular, it summarizes the most relevant readout and control techniques of electron/hole spin qubits, addresses the feasibility and reports some preliminary simulation results of two blocks: transimpedance amplifier (TIA) and pulse generator (PG). The TIA exhibits a transimpedance gain of 108.5 dB Ohm over a -3dB bandwidth of 18 GHz, with input-referred noise current spectral density of 0.89 pA/root(Hz) at 10 GHz. The PG provides a mm-wave sinusoidal pulse with a minimum duration time of 20 ps.
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